Solution-Processed Gallium-Tin-Based Oxide Semiconductors for Thin-Film Transistors

• Published in: Materials 2017-12, Vol.11 (1), p.46
• Main Authors: Zhang, Xue, Lee, Hyeonju, Kim, Jungwon, Kim, Eui-Jik, Park, Jaehoon
• Format: Article
• Language: English
• Subjects: Annealing; Chemical properties; Electrical properties; Gallium; Metals; Oxide coatings; Semiconductor devices; Thermogravimetric analysis; Thin film transistors; Tin; Transistors
• ISSN: 1996-1944; 1996-1944
• DOI: 10.3390/ma11010046

We investigated the effects of gallium (Ga) and tin (Sn) compositions on the structural and chemical properties of Ga-Sn-mixed (Ga:Sn) oxide films and the electrical properties of Ga:Sn oxide thin-film transistors (TFTs). The thermogravimetric analysis results indicate that solution-processed oxide films can be produced via thermal annealing at 500 °C. The oxygen deficiency ratio in the Ga:Sn oxide film increased from 0.18 (Ga oxide) and 0.30 (Sn oxide) to 0.36, while the X-ray diffraction peaks corresponding to Sn oxide significantly reduced. The Ga:Sn oxide film exhibited smaller grains compared to the nanocrystalline Sn oxide film, while the Ga oxide film exhibited an amorphous morphology. We found that the electrical properties of TFTs significantly improve by mixing Ga and Sn. Here, the optimum weight ratio of the constituents in the mixture of Ga and Sn precursor sols was determined to be 1.0:0.9 (Ga precursor sol:Sn precursor sol) for application in the solution-processed Ga:Sn oxide TFTs. In addition, when the Ga(1.0):Sn(0.9) oxide film was thermally annealed at 900 °C, the field-effect mobility of the TFT was notably enhanced from 0.02 to 1.03 cm²/Vs. Therefore, the mixing concentration ratio and annealing temperature are crucial for the chemical and morphological properties of solution-processed Ga:Sn oxide films and for the TFT performance.