Locally Gated SnS2/hBN Thin Film Transistors with a Broadband Photoresponse

• Published in: Scientific reports 2018-07, Vol.8 (1), p.1-8, Article 10585
• Main Authors: Chu, Dongil, Pak, Sang Woo, Kim, Eun Kyu
• Format: Article
• Language: English
• Subjects: 140/133; 639/301/357/1018; 639/925/927/1007; Boron; Humanities and Social Sciences; multidisciplinary; Photoresponse; Science; Science (multidisciplinary); Selenium; Silicon; Thin films; Tin; Transistors
• ISSN: 2045-2322; 2045-2322
• DOI: 10.1038/s41598-018-28765-4

Next-generation flexible and transparent electronics demand newer materials with superior characteristics. Tin dichalcogenides, Sn(S,Se) 2 , are layered crystal materials that show promise for implementation in flexible electronics and optoelectronics. They have band gap energies that are dependent on their atomic layer number and selenium content. A variety of studies has focused in particular on tin disulfide (SnS 2 ) channel transistors with conventional silicon substrates. However, the effort of interchanging the gate dielectric by utilizing high-quality hexagonal boron nitride (hBN) still remains. In this work, the hBN coupled SnS 2 thin film transistors are demonstrated with bottom-gated device configuration. The electrical transport characteristics of the SnS 2 channel transistor present a high current on/off ratio, reaching as high as 10 5 and a ten-fold enhancement in subthreshold swing compared to a high-κ dielectric covered device. We also demonstrate the spectral photoresponsivity from ultraviolet to infrared in a multi-layered SnS 2 phototransistor. The device architecture is suitable to promote diverse studied on flexible and transparent thin film transistors for further applications.