A Novel Method of Synthesizing Graphene for Electronic Device Applications

This article reports a novel and efficient method to synthesize graphene using a thermal decomposition process. In this method, silicon carbide (SiC) thin films grown on Si(100) wafers with an AlN buffer layer were used as substrates. CO₂ laser beam heating, without vacuum or controlled atmosphere,...

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Bibliographic Details
Published in:Materials 2018-06, Vol.11 (7), p.1120
Main Authors: Galvão, Nierlly, Vasconcelos, Getúlio, Pessoa, Rodrigo, Machado, João, Guerino, Marciel, Fraga, Mariana, Rodrigues, Bruno, Camus, Julien, Djouadi, Abdou, Maciel, Homero
Format: Article
Language:English
Subjects:
Atmospheric pressure
Buffer layers
Carbon dioxide
Carbon dioxide lasers
Chemical Sciences
Decomposition
Electrical properties
Flux density
Gas flow
Graphene
Graphite
Hot pressing
Laser beam heating
Lasers
Material chemistry
Microscopy
Morphology
Organic chemistry
Powder metallurgy
Quality
Silicon carbide
Silicon substrates
Spectrum analysis
Synthesis
Thermal decomposition
Thin films
Wafers
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Summary:This article reports a novel and efficient method to synthesize graphene using a thermal decomposition process. In this method, silicon carbide (SiC) thin films grown on Si(100) wafers with an AlN buffer layer were used as substrates. CO₂ laser beam heating, without vacuum or controlled atmosphere, was applied for SiC thermal decomposition. The physical, chemical, morphological, and electrical properties of the laser-produced graphene were investigated for different laser energy densities. The results demonstrate that graphene was produced in the form of small islands with quality, density, and properties depending on the applied laser energy density. Furthermore, the produced graphene exhibited a sheet resistance characteristic similar to graphene grown on mono-crystalline SiC wafers, which indicates its potential for electronic device applications.
ISSN:1996-1944
1996-1944
DOI:10.3390/ma11071120