Soft Nondamaging Contacts Formed from Eutectic Ga–In for the Accurate Determination of Dielectric Constants of Organic Materials

A method for accurately measuring the relative dielectric constant (εr) of thin films of soft, organic materials is described. The effects of the bombardment of these materials with hot Al atoms, the most commonly used top electrode, are mitigated by using electrodes fabricated from eutectic gallium...

Full description

Saved in:
Bibliographic Details
Published in:Chemistry of materials 2018-08, Vol.30 (16), p.5527-5533
Main Authors: Douvogianni, Evgenia, Qiu, Xinkai, Qiu, Li, Jahani, Fatemeh, Kooistra, Floris B, Hummelen, Jan C, Chiechi, Ryan C
Format: Article
Language:English
Subjects:
Methods/Protocols
Citations: Items that this one cites
Items that cite this one
Online Access:Get full text
Tags: Add Tag
No Tags, Be the first to tag this record!
Description
Summary:A method for accurately measuring the relative dielectric constant (εr) of thin films of soft, organic materials is described. The effects of the bombardment of these materials with hot Al atoms, the most commonly used top electrode, are mitigated by using electrodes fabricated from eutectic gallium–indium (EGaIn). The geometry of the electrode is defined by injection into microchannels to form stable structures that are nondamaging and that conform to the topology of the organic thin film. The εr of a series of references and new organic materials, polymers, and fullerene derivatives was derived from impedance spectroscopy measurements for both Al and EGaIn electrodes showing the specific limitations of Al with soft, organic materials and overcoming them with EGaIn to determine their dielectric properties and provide realistic values of εr.
ISSN:0897-4756
1520-5002
DOI:10.1021/acs.chemmater.8b02212