Graphene/semi-insulating single crystal CdTe Schottky-type heterojunction X- and γ-Ray Radiation Detectors

We developed a new concept of X- and γ-ray radiation semiconductor detectors based on a large area graphene/semi-insulating single crystal CdTe Schottky-type heterojunction. These two terminal electronic devices can be easily fabricated by forming a Van der Waals contact between large area chemical...

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Bibliographic Details
Published in:Scientific reports 2019-01, Vol.9 (1), p.1065-1065, Article 1065
Main Authors: Brus, V. V., Maslyanchuk, O. L., Solovan, M. M., Maryanchuk, P. D., Fodchuk, I., Gnatyuk, V. A., Vakhnyak, N. D., Melnychuk, S. V., Aoki, T.
Format: Article
Language:English
Subjects:
639/301/1005/1007
639/925/927/1007
639/925/927/511
Air temperature
Cesium radioisotopes
Electrical properties
Electronic equipment
Fabrication
Humanities and Social Sciences
multidisciplinary
Production costs
Science
Science (multidisciplinary)
Sensors
Single crystals
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Summary:We developed a new concept of X- and γ-ray radiation semiconductor detectors based on a large area graphene/semi-insulating single crystal CdTe Schottky-type heterojunction. These two terminal electronic devices can be easily fabricated by forming a Van der Waals contact between large area chemical vapor deposited graphene and CdTe substrates in air and at room temperature. This approach significantly reduces the fabrication cost and improves the reproducibility and stability of electrical properties. A detailed analysis of their AC and DC electrical properties was carried out in order to determine the width of the space charge region and dominant charge transport mechanisms at reverse bias. The unoptimized graphene/CdTe heterojunction detectors exhibited a promising spectral resolution of 241 Am (59 keV) and 137 Cs (662 keV) isotope radiation at room temperature.
ISSN:2045-2322
2045-2322
DOI:10.1038/s41598-018-37637-w