Pulsed photo-ionization spectroscopy of traps in as-grown and neutron irradiated ammonothermally synthesized GaN

GaN-based structures are promising for production of radiation detectors and high-voltage high-frequency devices. Particle detectors made of GaN are beneficial as devices simultaneously generating of the optical and electrical signals. Photon-electron coupling cross-section is a parameter which rela...

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Bibliographic Details
Published in:Scientific reports 2019-02, Vol.9 (1), p.1473-1473, Article 1473
Main Authors: Gaubas, E., Čeponis, T., Meškauskaite, D., Mickevičius, J., Pavlov, J., Rumbauskas, V., Grigonis, R., Zajac, M., Kucharski, R.
Format: Article
Language:English
Subjects:
140/125
639/301/1005/1007
639/301/119/995
639/766/1130/2799
Cross-sections
Humanities and Social Sciences
Ionization
multidisciplinary
Neutrons
Oscillators
Reactors
Science
Science (multidisciplinary)
Spectroscopy
Spectrum analysis
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Summary:GaN-based structures are promising for production of radiation detectors and high-voltage high-frequency devices. Particle detectors made of GaN are beneficial as devices simultaneously generating of the optical and electrical signals. Photon-electron coupling cross-section is a parameter which relates radiation absorption and emission characteristics. On the other hand, photon-electron coupling cross-section together with photo-ionization energy are fingerprints of deep centres in material. In this work, the wafer fragments of the GaN grown by ammonothermal (AT) technology are studied to reveal the dominant defects introduced by growth procedures and reactor neutron irradiations in a wide range, 10 12 –10 16  cm −2 , of fluences. Several defects in the as-grown and irradiated material have been revealed by using the pulsed photo-ionization spectroscopy (PPIS) technique. The PPIS measurements were performed by combining femtosecond (40 fs) and nanosecond (4 ns) laser pulses emitted by optical parametric oscillators (OPO) to clarify the role of electron-phonon coupling. Variations of the operational characteristics of the tentative sensors, made of the AT GaN doped with Mg and Mn, under radiation damage by reactor neutrons have been considered.
ISSN:2045-2322
2045-2322
DOI:10.1038/s41598-018-38138-6