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Growth Characterization of Intermetallic Compound at the Ti/Al Solid State Interface
Ti-Al diffusion couples, prepared by resistance spot welding, were annealed up to 112 hours at 823, 848, and 873 K in ambient atmosphere. The interfacial microstructure was observed and analyzed using SEM and TEM. The growth characterization of intermetallic compound formed at the Ti/Al solid state...
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Published in: | Materials 2019-02, Vol.12 (3), p.472 |
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Main Authors: | , , , |
Format: | Article |
Language: | English |
Subjects: | |
Citations: | Items that this one cites Items that cite this one |
Online Access: | Get full text |
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Summary: | Ti-Al diffusion couples, prepared by resistance spot welding, were annealed up to 112 hours at 823, 848, and 873 K in ambient atmosphere. The interfacial microstructure was observed and analyzed using SEM and TEM. The growth characterization of intermetallic compound formed at the Ti/Al solid state interface was investigated. Only TiAl₃ phase was detected in the interfacial zone, and its growth was governed by reaction-controlled mechanism in the previous period and by diffusion-controlled mechanism in the latter period. The activation energies were 198019 and 122770 J/mol for reaction-controlled and diffusion-controlled mechanism, respectively. |
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ISSN: | 1996-1944 1996-1944 |
DOI: | 10.3390/ma12030472 |