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Growth Characterization of Intermetallic Compound at the Ti/Al Solid State Interface

Ti-Al diffusion couples, prepared by resistance spot welding, were annealed up to 112 hours at 823, 848, and 873 K in ambient atmosphere. The interfacial microstructure was observed and analyzed using SEM and TEM. The growth characterization of intermetallic compound formed at the Ti/Al solid state...

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Bibliographic Details
Published in:Materials 2019-02, Vol.12 (3), p.472
Main Authors: Zhao, Yangyang, Li, Jiuyong, Qiu, Ranfeng, Shi, Hongxin
Format: Article
Language:English
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Summary:Ti-Al diffusion couples, prepared by resistance spot welding, were annealed up to 112 hours at 823, 848, and 873 K in ambient atmosphere. The interfacial microstructure was observed and analyzed using SEM and TEM. The growth characterization of intermetallic compound formed at the Ti/Al solid state interface was investigated. Only TiAl₃ phase was detected in the interfacial zone, and its growth was governed by reaction-controlled mechanism in the previous period and by diffusion-controlled mechanism in the latter period. The activation energies were 198019 and 122770 J/mol for reaction-controlled and diffusion-controlled mechanism, respectively.
ISSN:1996-1944
1996-1944
DOI:10.3390/ma12030472