Impact of Buffer Layer Process and Na on Shunt Paths of Monolithic Series-connected CIGSSe Thin Film Solar Cells

The illuminated current-voltage characteristics of Cu(In,Ga)(S,Se) 2 (CIGSSe) thin film solar cells fabricated using two different buffer layer processes: chemical bath deposition (CBD) and atomic layer deposition (ALD) were investigated. The CIGSSe solar cell with the ALD buffer showed comparable c...

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Bibliographic Details
Published in:Scientific reports 2019-03, Vol.9 (1), p.3666-3666, Article 3666
Main Authors: Bin Mo, Chan, Park, Se Jin, Bae, Soohyun, Lim, Mi-hwa, Nam, Junggyu, Kim, Dongseop, Yang, JungYup, Suh, Dongchul, Min, Byoung Koun, Kim, Donghwan, Kang, Yoonmook, Kim, Young-Su, Lee, Hae-seok
Format: Article
Language:English
Subjects:
639/301/299/946
639/4077/909/4101/4096/946
Glass substrates
Humanities and Social Sciences
multidisciplinary
Photovoltaic cells
Science
Science (multidisciplinary)
Solar cells
Thermography
Thin films
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Summary:The illuminated current-voltage characteristics of Cu(In,Ga)(S,Se) 2 (CIGSSe) thin film solar cells fabricated using two different buffer layer processes: chemical bath deposition (CBD) and atomic layer deposition (ALD) were investigated. The CIGSSe solar cell with the ALD buffer showed comparable conversion efficiency to the CIGSSe solar cell with CBD buffer but lower shunt resistance even though it showed lower point shunt defect density as measured in electroluminescence. The shunt paths were investigated in detail by capturing the high-resolution dark lock-in thermography images, resolving the shunt resistance contributions of the scribing patterns (P1, P3), and depth profiling of the constituent elements. It was found that the concentration of Na from the soda-lime glass substrate played a key role in controlling the shunt paths. In the ALD process, Na segregated at the surface of CIGSSe and contributed to the increase in the shunt current through P1 and P3, resulting in a reduction in the fill factor of the CIGSSe solar cells.
ISSN:2045-2322
2045-2322
DOI:10.1038/s41598-019-38945-5