Contactless THz-based bulk semiconductor mobility measurements using two-photon excitation

We perform contactless bulk mobility measurements for ZnSe, ZnTe, GaP, CdS, and GaSe in an optical pump THz probe experiment. As opposed to above-gap excitation or contact methods, two-photon absorption excites the entire sample thickness producing measurable signals with 10 carriers/cm and higher d...

Full description

Saved in:
Bibliographic Details
Published in:Optics express 2018-11, Vol.26 (23), p.29848-29853
Main Authors: Wahlstrand, J K, Heilweil, E J
Format: Article
Language:English
Citations: Items that this one cites
Items that cite this one
Online Access:Get full text
Tags: Add Tag
No Tags, Be the first to tag this record!
cited_by cdi_FETCH-LOGICAL-c384t-d8d7faf02db3dc6e790f6400b6ed5c6cee0d8e565719ad58468a34576897d3003
cites cdi_FETCH-LOGICAL-c384t-d8d7faf02db3dc6e790f6400b6ed5c6cee0d8e565719ad58468a34576897d3003
container_end_page 29853
container_issue 23
container_start_page 29848
container_title Optics express
container_volume 26
creator Wahlstrand, J K
Heilweil, E J
description We perform contactless bulk mobility measurements for ZnSe, ZnTe, GaP, CdS, and GaSe in an optical pump THz probe experiment. As opposed to above-gap excitation or contact methods, two-photon absorption excites the entire sample thickness producing measurable signals with 10 carriers/cm and higher density. For ZnTe and GaSe samples, the measured mobility using two-photon excitation is higher than that measured with one-photon excitation.
doi_str_mv 10.1364/OE.26.029848
format article
fullrecord <record><control><sourceid>proquest_pubme</sourceid><recordid>TN_cdi_pubmedcentral_primary_oai_pubmedcentral_nih_gov_6460479</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><sourcerecordid>2137467818</sourcerecordid><originalsourceid>FETCH-LOGICAL-c384t-d8d7faf02db3dc6e790f6400b6ed5c6cee0d8e565719ad58468a34576897d3003</originalsourceid><addsrcrecordid>eNpVkb1PwzAQxS0EoqWwMaOMDKQ4sWM7CxKqCkVC6lIWFsuxL60hiUvs8PXXE9RSlelOup_ePb2H0HmCxwlh9Ho-HadsjNNcUHGAhgnOaUyx4Id7-wCdeP-CcUJ5zo_RgGDK8pySIXqeuCYoHSrwPlrMvuNCeTBR0VWvkYfaateYTgfXRrUrbGXDV1SD8l0LNTTBR523zTIKHy5er1xwTQSf2gYVrGtO0VGpKg9n2zlCT3fTxWQWP87vHya3j7EmgobYCMNLVeLUFMRoBjzHJaMYFwxMppkGwEZAxjKe5MpkgjKhCM04Ezk3BGMyQjcb3XVX1GB076tVlVy3tlbtl3TKyv-Xxq7k0r1LRhnuA-kFLrcCrXvrwAdZW6-hqlQDrvMyTQinjItE9OjVBtWt876FcvcmwfK3DjmfypTJTR09frFvbQf_5U9-AJ8GiIs</addsrcrecordid><sourcetype>Open Access Repository</sourcetype><iscdi>true</iscdi><recordtype>article</recordtype><pqid>2137467818</pqid></control><display><type>article</type><title>Contactless THz-based bulk semiconductor mobility measurements using two-photon excitation</title><source>EZB Electronic Journals Library</source><creator>Wahlstrand, J K ; Heilweil, E J</creator><creatorcontrib>Wahlstrand, J K ; Heilweil, E J</creatorcontrib><description>We perform contactless bulk mobility measurements for ZnSe, ZnTe, GaP, CdS, and GaSe in an optical pump THz probe experiment. As opposed to above-gap excitation or contact methods, two-photon absorption excites the entire sample thickness producing measurable signals with 10 carriers/cm and higher density. For ZnTe and GaSe samples, the measured mobility using two-photon excitation is higher than that measured with one-photon excitation.</description><identifier>ISSN: 1094-4087</identifier><identifier>EISSN: 1094-4087</identifier><identifier>DOI: 10.1364/OE.26.029848</identifier><identifier>PMID: 30469943</identifier><language>eng</language><publisher>United States</publisher><ispartof>Optics express, 2018-11, Vol.26 (23), p.29848-29853</ispartof><lds50>peer_reviewed</lds50><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c384t-d8d7faf02db3dc6e790f6400b6ed5c6cee0d8e565719ad58468a34576897d3003</citedby><cites>FETCH-LOGICAL-c384t-d8d7faf02db3dc6e790f6400b6ed5c6cee0d8e565719ad58468a34576897d3003</cites><orcidid>0000-0002-2967-918X</orcidid></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><link.rule.ids>230,314,780,784,885,27924,27925</link.rule.ids><backlink>$$Uhttps://www.ncbi.nlm.nih.gov/pubmed/30469943$$D View this record in MEDLINE/PubMed$$Hfree_for_read</backlink></links><search><creatorcontrib>Wahlstrand, J K</creatorcontrib><creatorcontrib>Heilweil, E J</creatorcontrib><title>Contactless THz-based bulk semiconductor mobility measurements using two-photon excitation</title><title>Optics express</title><addtitle>Opt Express</addtitle><description>We perform contactless bulk mobility measurements for ZnSe, ZnTe, GaP, CdS, and GaSe in an optical pump THz probe experiment. As opposed to above-gap excitation or contact methods, two-photon absorption excites the entire sample thickness producing measurable signals with 10 carriers/cm and higher density. For ZnTe and GaSe samples, the measured mobility using two-photon excitation is higher than that measured with one-photon excitation.</description><issn>1094-4087</issn><issn>1094-4087</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2018</creationdate><recordtype>article</recordtype><recordid>eNpVkb1PwzAQxS0EoqWwMaOMDKQ4sWM7CxKqCkVC6lIWFsuxL60hiUvs8PXXE9RSlelOup_ePb2H0HmCxwlh9Ho-HadsjNNcUHGAhgnOaUyx4Id7-wCdeP-CcUJ5zo_RgGDK8pySIXqeuCYoHSrwPlrMvuNCeTBR0VWvkYfaateYTgfXRrUrbGXDV1SD8l0LNTTBR523zTIKHy5er1xwTQSf2gYVrGtO0VGpKg9n2zlCT3fTxWQWP87vHya3j7EmgobYCMNLVeLUFMRoBjzHJaMYFwxMppkGwEZAxjKe5MpkgjKhCM04Ezk3BGMyQjcb3XVX1GB076tVlVy3tlbtl3TKyv-Xxq7k0r1LRhnuA-kFLrcCrXvrwAdZW6-hqlQDrvMyTQinjItE9OjVBtWt876FcvcmwfK3DjmfypTJTR09frFvbQf_5U9-AJ8GiIs</recordid><startdate>20181112</startdate><enddate>20181112</enddate><creator>Wahlstrand, J K</creator><creator>Heilweil, E J</creator><scope>NPM</scope><scope>AAYXX</scope><scope>CITATION</scope><scope>7X8</scope><scope>5PM</scope><orcidid>https://orcid.org/0000-0002-2967-918X</orcidid></search><sort><creationdate>20181112</creationdate><title>Contactless THz-based bulk semiconductor mobility measurements using two-photon excitation</title><author>Wahlstrand, J K ; Heilweil, E J</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c384t-d8d7faf02db3dc6e790f6400b6ed5c6cee0d8e565719ad58468a34576897d3003</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2018</creationdate><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Wahlstrand, J K</creatorcontrib><creatorcontrib>Heilweil, E J</creatorcontrib><collection>PubMed</collection><collection>CrossRef</collection><collection>MEDLINE - Academic</collection><collection>PubMed Central (Full Participant titles)</collection><jtitle>Optics express</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Wahlstrand, J K</au><au>Heilweil, E J</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Contactless THz-based bulk semiconductor mobility measurements using two-photon excitation</atitle><jtitle>Optics express</jtitle><addtitle>Opt Express</addtitle><date>2018-11-12</date><risdate>2018</risdate><volume>26</volume><issue>23</issue><spage>29848</spage><epage>29853</epage><pages>29848-29853</pages><issn>1094-4087</issn><eissn>1094-4087</eissn><abstract>We perform contactless bulk mobility measurements for ZnSe, ZnTe, GaP, CdS, and GaSe in an optical pump THz probe experiment. As opposed to above-gap excitation or contact methods, two-photon absorption excites the entire sample thickness producing measurable signals with 10 carriers/cm and higher density. For ZnTe and GaSe samples, the measured mobility using two-photon excitation is higher than that measured with one-photon excitation.</abstract><cop>United States</cop><pmid>30469943</pmid><doi>10.1364/OE.26.029848</doi><tpages>6</tpages><orcidid>https://orcid.org/0000-0002-2967-918X</orcidid><oa>free_for_read</oa></addata></record>
fulltext fulltext
identifier ISSN: 1094-4087
ispartof Optics express, 2018-11, Vol.26 (23), p.29848-29853
issn 1094-4087
1094-4087
language eng
recordid cdi_pubmedcentral_primary_oai_pubmedcentral_nih_gov_6460479
source EZB Electronic Journals Library
title Contactless THz-based bulk semiconductor mobility measurements using two-photon excitation
url http://sfxeu10.hosted.exlibrisgroup.com/loughborough?ctx_ver=Z39.88-2004&ctx_enc=info:ofi/enc:UTF-8&ctx_tim=2025-01-06T21%3A19%3A44IST&url_ver=Z39.88-2004&url_ctx_fmt=infofi/fmt:kev:mtx:ctx&rfr_id=info:sid/primo.exlibrisgroup.com:primo3-Article-proquest_pubme&rft_val_fmt=info:ofi/fmt:kev:mtx:journal&rft.genre=article&rft.atitle=Contactless%20THz-based%20bulk%20semiconductor%20mobility%20measurements%20using%20two-photon%20excitation&rft.jtitle=Optics%20express&rft.au=Wahlstrand,%20J%20K&rft.date=2018-11-12&rft.volume=26&rft.issue=23&rft.spage=29848&rft.epage=29853&rft.pages=29848-29853&rft.issn=1094-4087&rft.eissn=1094-4087&rft_id=info:doi/10.1364/OE.26.029848&rft_dat=%3Cproquest_pubme%3E2137467818%3C/proquest_pubme%3E%3Cgrp_id%3Ecdi_FETCH-LOGICAL-c384t-d8d7faf02db3dc6e790f6400b6ed5c6cee0d8e565719ad58468a34576897d3003%3C/grp_id%3E%3Coa%3E%3C/oa%3E%3Curl%3E%3C/url%3E&rft_id=info:oai/&rft_pqid=2137467818&rft_id=info:pmid/30469943&rfr_iscdi=true