High Optical Response of Niobium-Doped WSe₂-Layered Crystals

The optical properties of WSe₂-layered crystals doped with 0.5% niobium (Nb) grown by the chemical vapor transport method were characterized by piezoreflectance (PzR), photoconductivity (PC) spectroscopy, frequency-dependent photocurrent, and time-resolved photoresponse. With the incorporation of 0....

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Published in:Materials 2019-04, Vol.12 (7), p.1161
Main Authors: Hsu, Hung-Pin, Lin, Der-Yuh, Jheng, Jhin-Jhong, Lin, Pin-Cheng, Ko, Tsung-Shine
Format: Article
Language:English
Subjects:
Behavior
Crystals
Graphene
Investigations
Niobium
Optical properties
Photoconductivity
Photoelectric effect
Photoelectric emission
Semiconductors
Spectrum analysis
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cited_by cdi_FETCH-LOGICAL-c406t-db4e22e0856e86e45c7020b136dd568602ff226ae26fb6f3399890eef0cac4083
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creator Hsu, Hung-Pin
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description The optical properties of WSe₂-layered crystals doped with 0.5% niobium (Nb) grown by the chemical vapor transport method were characterized by piezoreflectance (PzR), photoconductivity (PC) spectroscopy, frequency-dependent photocurrent, and time-resolved photoresponse. With the incorporation of 0.5% Nb, the WSe₂ crystal showed slight blue shifts in the near band edge excitonic transitions and exhibited strongly enhanced photoresponsivity. Frequency-dependent photocurrent and time-resolved photoresponse were measured to explore the kinetic decay processes of carriers. Our results show the potential application of layered crystals for photodetection devices based on Nb-doped WSe₂-layered crystals.
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With the incorporation of 0.5% Nb, the WSe₂ crystal showed slight blue shifts in the near band edge excitonic transitions and exhibited strongly enhanced photoresponsivity. Frequency-dependent photocurrent and time-resolved photoresponse were measured to explore the kinetic decay processes of carriers. Our results show the potential application of layered crystals for photodetection devices based on Nb-doped WSe₂-layered crystals.</description><identifier>ISSN: 1996-1944</identifier><identifier>EISSN: 1996-1944</identifier><identifier>DOI: 10.3390/ma12071161</identifier><identifier>PMID: 30974754</identifier><language>eng</language><publisher>Switzerland: MDPI AG</publisher><subject>Behavior ; Crystals ; Graphene ; Investigations ; Niobium ; Optical properties ; Photoconductivity ; Photoelectric effect ; Photoelectric emission ; Semiconductors ; Spectrum analysis</subject><ispartof>Materials, 2019-04, Vol.12 (7), p.1161</ispartof><rights>2019 by the authors. 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subjects Behavior
Crystals
Graphene
Investigations
Niobium
Optical properties
Photoconductivity
Photoelectric effect
Photoelectric emission
Semiconductors
Spectrum analysis
title High Optical Response of Niobium-Doped WSe₂-Layered Crystals
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