Analysis of the hump phenomenon and needle defect states formed by driving stress in the oxide semiconductor

The reduction in current ability accompanied by the hump phenomenon in oxide semiconductor thin-film transistors to which high DC voltages and AC drive voltages are applied has not been studied extensively, although it is a significant bottleneck in the manufacture of integrated circuits. Here, we r...

Full description

Saved in:
Bibliographic Details
Published in:Scientific reports 2019-08, Vol.9 (1), p.11977-9, Article 11977
Main Authors: Lee, Hyeon-Jun, Abe, Katsumi, Noh, Hee Yeon, Kim, June-Seo, Lee, Hyunki, Lee, Myoung-Jae
Format: Article
Language:English
Subjects:
639/166/987
639/766/1130/2798
Computer applications
Conduction
Electrodes
Humanities and Social Sciences
Integrated circuits
Mathematical models
multidisciplinary
Science
Science (multidisciplinary)
Semiconductors
Simulation
Thin films
Transistors
Citations: Items that this one cites
Items that cite this one
Online Access:Get full text
Tags: Add Tag
No Tags, Be the first to tag this record!
Description
Summary:The reduction in current ability accompanied by the hump phenomenon in oxide semiconductor thin-film transistors to which high DC voltages and AC drive voltages are applied has not been studied extensively, although it is a significant bottleneck in the manufacture of integrated circuits. Here, we report on the origin of the hump and current drop in reliability tests caused by the degradation in the oxide semiconductor during a circuit driving test. The hump phenomenon and current drop according to two different driving stresses were verified. Through a numerical computational simulation, we confirmed that this issue can be caused by an additional “ needle ”, a shallow (~0.2 eV) and narrow (
ISSN:2045-2322
2045-2322
DOI:10.1038/s41598-019-48552-z