Temperature Investigation on 3C-SiC Homo-Epitaxy on Four-Inch Wafers

In this work, results related to the temperature influence on the homo-epitaxial growth process of 3C-SiC is presented. The seed for the epitaxial layer was obtained by an innovative technique based on silicon melting: after the first step of the hetero-epitaxial growth process of 3C-SiC on a Si sub...

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Bibliographic Details
Published in:Materials 2019-10, Vol.12 (20), p.3293
Main Authors: Anzalone, Ruggero, Zimbone, Massimo, Calabretta, Cristiano, Mauceri, Marco, Alberti, Alessandra, Reitano, Riccardo, La Via, Francesco
Format: Article
Language:English
Subjects:
Chemical vapor deposition
Crystal defects
Defects
Investigations
Organic chemistry
Quality
Silicon
Silicon carbide
Silicon substrates
Thermal expansion
Thick films
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Summary:In this work, results related to the temperature influence on the homo-epitaxial growth process of 3C-SiC is presented. The seed for the epitaxial layer was obtained by an innovative technique based on silicon melting: after the first step of the hetero-epitaxial growth process of 3C-SiC on a Si substrate, Si melts, and the remaining freestanding SiC layer was used as a seed layer for the homo-epitaxial growth. Different morphological analyses indicate that the growth temperature and the growth rate play a fundamental role in the stacking faults density. In details, X-ray diffraction and micro-Raman analysis show the strict relationship between growth temperature, crystal quality, and doping incorporation in the homo-epitaxial chemical vapor deposition CVD growth process of a 3C-SiC wafer. Furthermore, photoluminescence spectra show a considerable reduction of point defects during homo-epitaxy at high temperatures.
ISSN:1996-1944
1996-1944
DOI:10.3390/ma12203293