Random Telegraph Noises from the Source Follower, the Photodiode Dark Current, and the Gate-Induced Sense Node Leakage in CMOS Image Sensors

In this paper we present a systematic approach to sort out different types of random telegraph noises (RTN) in CMOS image sensors (CIS) by examining their dependencies on the transfer gate off-voltage, the reset gate off-voltage, the photodiode integration time, and the sense node charge retention t...

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Bibliographic Details
Published in:Sensors (Basel, Switzerland) Switzerland), 2019-12, Vol.19 (24), p.5447
Main Authors: Chao, Calvin Yi-Ping, Yeh, Shang-Fu, Wu, Meng-Hsu, Chou, Kuo-Yu, Tu, Honyih, Lee, Chih-Lin, Yin, Chin, Paillet, Philippe, Goiffon, Vincent
Format: Article
Language:English
Subjects:
CMOS
Dark current
Electric potential
Leakage
Nodes
Noise
Noise reduction
Photodiodes
Radiation
Semiconductors
Sensors
Transistors
Voltage
X ray irradiation
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Summary:In this paper we present a systematic approach to sort out different types of random telegraph noises (RTN) in CMOS image sensors (CIS) by examining their dependencies on the transfer gate off-voltage, the reset gate off-voltage, the photodiode integration time, and the sense node charge retention time. Besides the well-known source follower RTN, we have identified the RTN caused by varying photodiode dark current, transfer-gate and reset-gate induced sense node leakage. These four types of RTN and the dark signal shot noises dominate the noise distribution tails of CIS and non-CIS chips under test, either with or without X-ray irradiation. The effect of correlated multiple sampling (CMS) on noise reduction is studied and a theoretical model is developed to account for the measurement results.
ISSN:1424-8220
1424-8220
DOI:10.3390/s19245447