Analog Switching and Artificial Synaptic Behavior of Ag/SiOx:Ag/TiOx/p++-Si Memristor Device

In this study, by inserting a buffer layer of TiO x between the SiO x :Ag layer and the bottom electrode, we have developed a memristor device with a simple structure of Ag/SiO x :Ag/TiO x /p ++ -Si by a physical vapor deposition process, in which the filament growth and rupture can be efficiently c...

Full description

Saved in:
Bibliographic Details
Published in:Nanoscale research letters 2020-01, Vol.15 (1), p.30-30, Article 30
Main Authors: Ilyas, Nasir, Li, Dongyang, Li, Chunmei, Jiang, Xiangdong, Jiang, Yadong, Li, Wei
Format: Article
Language:English
Subjects:
Buffer layers
Chemistry and Materials Science
Current voltage characteristics
Filaments
Long-term potentiation
Materials Science
Memristors
Molecular Medicine
Nano Express
Nanochemistry
Nanoscale Science and Technology
Nanotechnology
Nanotechnology and Microengineering
Performance enhancement
Physical vapor deposition
Plastic properties
Plasticity
Switching
Time dependence
Titanium oxides
Citations: Items that this one cites
Items that cite this one
Online Access:Get full text
Tags: Add Tag
No Tags, Be the first to tag this record!
Description
Summary:In this study, by inserting a buffer layer of TiO x between the SiO x :Ag layer and the bottom electrode, we have developed a memristor device with a simple structure of Ag/SiO x :Ag/TiO x /p ++ -Si by a physical vapor deposition process, in which the filament growth and rupture can be efficiently controlled during analog switching. The synaptic characteristics of the memristor device with a wide range of resistance change for weight modulation by implementing positive or negative pulse trains have been investigated extensively. Several learning and memory functions have been achieved simultaneously, including potentiation/depression, paired-pulse-facilitation (PPF), short-term plasticity (STP), and STP-to-LTP (long-term plasticity) transition controlled by repeating pulses more than a rehearsal operation, and spike-time-dependent-plasticity (STDP) as well. Based on the analysis of logarithmic I-V characteristics, it has been found that the controlled evolution/dissolution of conductive Ag-filaments across the dielectric layers can improve the performance of the testing memristor device.
ISSN:1931-7573
1556-276X
DOI:10.1186/s11671-020-3249-7