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High mobility in a van der Waals layered antiferromagnetic metal
Van der Waals (vdW) materials with magnetic order have been heavily pursued for fundamental physics as well as for device design. Despite the rapid advances, so far, they are mainly insulating or semiconducting, and none of them has a high electronic mobility-a property that is rare in layered vdW m...
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Published in: | Science advances 2020-02, Vol.6 (6), p.eaay6407-eaay6407 |
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creator | Lei, Shiming Lin, Jingjing Jia, Yanyu Gray, Mason Topp, Andreas Farahi, Gelareh Klemenz, Sebastian Gao, Tong Rodolakis, Fanny McChesney, Jessica L Ast, Christian R Yazdani, Ali Burch, Kenneth S Wu, Sanfeng Ong, Nai Phuan Schoop, Leslie M |
description | Van der Waals (vdW) materials with magnetic order have been heavily pursued for fundamental physics as well as for device design. Despite the rapid advances, so far, they are mainly insulating or semiconducting, and none of them has a high electronic mobility-a property that is rare in layered vdW materials in general. The realization of a high-mobility vdW material that also exhibits magnetic order would open the possibility for novel magnetic twistronic or spintronic devices. Here, we report very high carrier mobility in the layered vdW antiferromagnet GdTe
. The electron mobility is beyond 60,000 cm
V
s
, which is the highest among all known layered magnetic materials, to the best of our knowledge. Among all known vdW materials, the mobility of bulk GdTe
is comparable to that of black phosphorus. By mechanical exfoliation, we further demonstrate that GdTe
can be exfoliated to ultrathin flakes of three monolayers. |
doi_str_mv | 10.1126/sciadv.aay6407 |
format | article |
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. The electron mobility is beyond 60,000 cm
V
s
, which is the highest among all known layered magnetic materials, to the best of our knowledge. Among all known vdW materials, the mobility of bulk GdTe
is comparable to that of black phosphorus. By mechanical exfoliation, we further demonstrate that GdTe
can be exfoliated to ultrathin flakes of three monolayers.</description><identifier>ISSN: 2375-2548</identifier><identifier>EISSN: 2375-2548</identifier><identifier>DOI: 10.1126/sciadv.aay6407</identifier><identifier>PMID: 32083184</identifier><language>eng</language><publisher>United States: AAAS</publisher><subject>INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CHEMISTRY ; Materials Science ; SciAdv r-articles</subject><ispartof>Science advances, 2020-02, Vol.6 (6), p.eaay6407-eaay6407</ispartof><rights>Copyright © 2020 The Authors, some rights reserved; exclusive licensee American Association for the Advancement of Science. No claim to original U.S. Government Works. Distributed under a Creative Commons Attribution NonCommercial License 4.0 (CC BY-NC).</rights><rights>Copyright © 2020 The Authors, some rights reserved; exclusive licensee American Association for the Advancement of Science. No claim to original U.S. Government Works. Distributed under a Creative Commons Attribution NonCommercial License 4.0 (CC BY-NC). 2020 The Authors</rights><lds50>peer_reviewed</lds50><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c483t-3a4d71c6af51127ec025815dedbe50b4895485577013f01ace1617b5884def9b3</citedby><cites>FETCH-LOGICAL-c483t-3a4d71c6af51127ec025815dedbe50b4895485577013f01ace1617b5884def9b3</cites><orcidid>0000-0001-7166-1058 ; 0000-0001-6061-8441 ; 0000-0003-3359-4880 ; 0000-0003-3459-4241 ; 0000-0002-8157-3892 ; 0000-0002-7541-0245 ; 0000-0003-4996-8904 ; 0000-0001-8041-7161 ; 0000-0001-5156-2693 ; 0000-0002-2778-9166 ; 0000000275410245 ; 0000000334594241 ; 0000000349968904 ; 0000000227789166 ; 0000000171661058 ; 0000000160618441 ; 0000000180417161 ; 0000000333594880 ; 0000000151562693 ; 0000000281573892</orcidid></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktopdf>$$Uhttps://www.ncbi.nlm.nih.gov/pmc/articles/PMC7007265/pdf/$$EPDF$$P50$$Gpubmedcentral$$Hfree_for_read</linktopdf><linktohtml>$$Uhttps://www.ncbi.nlm.nih.gov/pmc/articles/PMC7007265/$$EHTML$$P50$$Gpubmedcentral$$Hfree_for_read</linktohtml><link.rule.ids>230,314,723,776,780,881,2871,2872,27903,27904,53769,53771</link.rule.ids><backlink>$$Uhttps://www.ncbi.nlm.nih.gov/pubmed/32083184$$D View this record in MEDLINE/PubMed$$Hfree_for_read</backlink><backlink>$$Uhttps://www.osti.gov/servlets/purl/1599045$$D View this record in Osti.gov$$Hfree_for_read</backlink></links><search><creatorcontrib>Lei, Shiming</creatorcontrib><creatorcontrib>Lin, Jingjing</creatorcontrib><creatorcontrib>Jia, Yanyu</creatorcontrib><creatorcontrib>Gray, Mason</creatorcontrib><creatorcontrib>Topp, Andreas</creatorcontrib><creatorcontrib>Farahi, Gelareh</creatorcontrib><creatorcontrib>Klemenz, Sebastian</creatorcontrib><creatorcontrib>Gao, Tong</creatorcontrib><creatorcontrib>Rodolakis, Fanny</creatorcontrib><creatorcontrib>McChesney, Jessica L</creatorcontrib><creatorcontrib>Ast, Christian R</creatorcontrib><creatorcontrib>Yazdani, Ali</creatorcontrib><creatorcontrib>Burch, Kenneth S</creatorcontrib><creatorcontrib>Wu, Sanfeng</creatorcontrib><creatorcontrib>Ong, Nai Phuan</creatorcontrib><creatorcontrib>Schoop, Leslie M</creatorcontrib><creatorcontrib>Argonne National Lab. (ANL), Argonne, IL (United States)</creatorcontrib><title>High mobility in a van der Waals layered antiferromagnetic metal</title><title>Science advances</title><addtitle>Sci Adv</addtitle><description>Van der Waals (vdW) materials with magnetic order have been heavily pursued for fundamental physics as well as for device design. Despite the rapid advances, so far, they are mainly insulating or semiconducting, and none of them has a high electronic mobility-a property that is rare in layered vdW materials in general. The realization of a high-mobility vdW material that also exhibits magnetic order would open the possibility for novel magnetic twistronic or spintronic devices. Here, we report very high carrier mobility in the layered vdW antiferromagnet GdTe
. The electron mobility is beyond 60,000 cm
V
s
, which is the highest among all known layered magnetic materials, to the best of our knowledge. Among all known vdW materials, the mobility of bulk GdTe
is comparable to that of black phosphorus. By mechanical exfoliation, we further demonstrate that GdTe
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(ANL), Argonne, IL (United States)</aucorp><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>High mobility in a van der Waals layered antiferromagnetic metal</atitle><jtitle>Science advances</jtitle><addtitle>Sci Adv</addtitle><date>2020-02-07</date><risdate>2020</risdate><volume>6</volume><issue>6</issue><spage>eaay6407</spage><epage>eaay6407</epage><pages>eaay6407-eaay6407</pages><issn>2375-2548</issn><eissn>2375-2548</eissn><abstract>Van der Waals (vdW) materials with magnetic order have been heavily pursued for fundamental physics as well as for device design. Despite the rapid advances, so far, they are mainly insulating or semiconducting, and none of them has a high electronic mobility-a property that is rare in layered vdW materials in general. The realization of a high-mobility vdW material that also exhibits magnetic order would open the possibility for novel magnetic twistronic or spintronic devices. Here, we report very high carrier mobility in the layered vdW antiferromagnet GdTe
. The electron mobility is beyond 60,000 cm
V
s
, which is the highest among all known layered magnetic materials, to the best of our knowledge. Among all known vdW materials, the mobility of bulk GdTe
is comparable to that of black phosphorus. By mechanical exfoliation, we further demonstrate that GdTe
can be exfoliated to ultrathin flakes of three monolayers.</abstract><cop>United States</cop><pub>AAAS</pub><pmid>32083184</pmid><doi>10.1126/sciadv.aay6407</doi><orcidid>https://orcid.org/0000-0001-7166-1058</orcidid><orcidid>https://orcid.org/0000-0001-6061-8441</orcidid><orcidid>https://orcid.org/0000-0003-3359-4880</orcidid><orcidid>https://orcid.org/0000-0003-3459-4241</orcidid><orcidid>https://orcid.org/0000-0002-8157-3892</orcidid><orcidid>https://orcid.org/0000-0002-7541-0245</orcidid><orcidid>https://orcid.org/0000-0003-4996-8904</orcidid><orcidid>https://orcid.org/0000-0001-8041-7161</orcidid><orcidid>https://orcid.org/0000-0001-5156-2693</orcidid><orcidid>https://orcid.org/0000-0002-2778-9166</orcidid><orcidid>https://orcid.org/0000000275410245</orcidid><orcidid>https://orcid.org/0000000334594241</orcidid><orcidid>https://orcid.org/0000000349968904</orcidid><orcidid>https://orcid.org/0000000227789166</orcidid><orcidid>https://orcid.org/0000000171661058</orcidid><orcidid>https://orcid.org/0000000160618441</orcidid><orcidid>https://orcid.org/0000000180417161</orcidid><orcidid>https://orcid.org/0000000333594880</orcidid><orcidid>https://orcid.org/0000000151562693</orcidid><orcidid>https://orcid.org/0000000281573892</orcidid><oa>free_for_read</oa></addata></record> |
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title | High mobility in a van der Waals layered antiferromagnetic metal |
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