Interfacial effects on leakage currents in Cu/α-cristobalite/Cu junctions

As the miniaturization trend of integrated circuit continues, the leakage currents flow through the dielectric films insulating the interconnects become a critical issue. However, quantum transport through the mainstream on-chip interfaces between interconnects and dielectrics has not been addressed...

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Published in:Scientific reports 2020-03, Vol.10 (1), p.5303-5303, Article 5303
Main Authors: Lin, Kuan-Bo, Su, Yen-Hsun, Kaun, Chao-Cheng
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Language:English
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639/766
639/925
Electrodes
Humanities and Social Sciences
Interfaces
Leakage
multidisciplinary
Oxygen
Science
Science (multidisciplinary)
Silicon
Spectrum analysis
Symmetry
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description As the miniaturization trend of integrated circuit continues, the leakage currents flow through the dielectric films insulating the interconnects become a critical issue. However, quantum transport through the mainstream on-chip interfaces between interconnects and dielectrics has not been addressed from first principles yet. Here, using first-principles calculations based on density functional theory and nonequilibrium Green’s function formalism, we investigate the interfacial-dependent leakage currents in the Cu/α-cristobalite/Cu junctions. Our results show that the oxygen-rich interfaces form the lowest-leakage-current junction under small bias voltages, followed by the silicon-rich and oxygen-poor ones. This feature is attributed to their transmission spectra, related to their density of states and charge distributions. However, the oxygen-poor interfacial junction may conversely have a better dielectric strength than others, as its transmission gap, from −2.8 to 3.5 eV, is more symmetry respect to the Fermi level than others.
doi_str_mv 10.1038/s41598-020-62356-6
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fullrecord <record><control><sourceid>proquest_pubme</sourceid><recordid>TN_cdi_pubmedcentral_primary_oai_pubmedcentral_nih_gov_7093521</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><sourcerecordid>2382602172</sourcerecordid><originalsourceid>FETCH-LOGICAL-c425t-ad9b3f1adf64eadb8d72dec78fbac6cf0dfe6e6982b047bd0bc0809cd8ef37393</originalsourceid><addsrcrecordid>eNp9kc9O3DAQxi3UChDlBTigSFx6SdcZO05yQUKr0oKQuJSz5djjxUvWBjup1Mfqi_BM9Xa3y59D5-LRzG8-z-gj5KSiXyrK2lniVd21JQVaCmC1KMUeOQTK6xIYwIdX-QE5TmlJc9TQ8arbJwe5mkWAH5LrKz9itEo7NRRoLeoxFcEXA6oHtcBCTzGizzXni_k0e_5d6ujSGHo1uBFn86lYTl6PLvj0iXy0akh4vH2PyN3l1x_z7-XN7ber-cVNqTnUY6lM1zNbKWMFR2X61jRgUDet7ZUW2lJjUaDoWugpb3pDe01b2mnTomUN69gROd_oPk79Co3O60U1yMfoVir-kkE5-bbj3b1chJ-yoR2rocoCn7cCMTxNmEa5cknjMCiPYUoSWMvqqgHOM3r2Dl2GKfp83poCQSFzmYINpWNIKaLdLVNRuXZLbtyS2S351y0p8tDp6zN2I_-8yQDbACm3_ALjy9__kf0DkJOiXA</addsrcrecordid><sourcetype>Open Access Repository</sourcetype><iscdi>true</iscdi><recordtype>article</recordtype><pqid>2382602172</pqid></control><display><type>article</type><title>Interfacial effects on leakage currents in Cu/α-cristobalite/Cu junctions</title><source>Open Access: PubMed Central</source><source>Publicly Available Content Database</source><source>Free Full-Text Journals in Chemistry</source><source>Springer Nature - nature.com Journals - Fully Open Access</source><creator>Lin, Kuan-Bo ; Su, Yen-Hsun ; Kaun, Chao-Cheng</creator><creatorcontrib>Lin, Kuan-Bo ; Su, Yen-Hsun ; Kaun, Chao-Cheng</creatorcontrib><description>As the miniaturization trend of integrated circuit continues, the leakage currents flow through the dielectric films insulating the interconnects become a critical issue. However, quantum transport through the mainstream on-chip interfaces between interconnects and dielectrics has not been addressed from first principles yet. Here, using first-principles calculations based on density functional theory and nonequilibrium Green’s function formalism, we investigate the interfacial-dependent leakage currents in the Cu/α-cristobalite/Cu junctions. Our results show that the oxygen-rich interfaces form the lowest-leakage-current junction under small bias voltages, followed by the silicon-rich and oxygen-poor ones. This feature is attributed to their transmission spectra, related to their density of states and charge distributions. However, the oxygen-poor interfacial junction may conversely have a better dielectric strength than others, as its transmission gap, from −2.8 to 3.5 eV, is more symmetry respect to the Fermi level than others.</description><identifier>ISSN: 2045-2322</identifier><identifier>EISSN: 2045-2322</identifier><identifier>DOI: 10.1038/s41598-020-62356-6</identifier><identifier>PMID: 32210324</identifier><language>eng</language><publisher>London: Nature Publishing Group UK</publisher><subject>639/766 ; 639/925 ; Electrodes ; Humanities and Social Sciences ; Interfaces ; Leakage ; multidisciplinary ; Oxygen ; Science ; Science (multidisciplinary) ; Silicon ; Spectrum analysis ; Symmetry</subject><ispartof>Scientific reports, 2020-03, Vol.10 (1), p.5303-5303, Article 5303</ispartof><rights>The Author(s) 2020</rights><rights>This work is published under http://creativecommons.org/licenses/by/4.0/ (the “License”). Notwithstanding the ProQuest Terms and Conditions, you may use this content in accordance with the terms of the License.</rights><lds50>peer_reviewed</lds50><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed><cites>FETCH-LOGICAL-c425t-ad9b3f1adf64eadb8d72dec78fbac6cf0dfe6e6982b047bd0bc0809cd8ef37393</cites></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktopdf>$$Uhttps://www.proquest.com/docview/2382602172/fulltextPDF?pq-origsite=primo$$EPDF$$P50$$Gproquest$$Hfree_for_read</linktopdf><linktohtml>$$Uhttps://www.proquest.com/docview/2382602172?pq-origsite=primo$$EHTML$$P50$$Gproquest$$Hfree_for_read</linktohtml><link.rule.ids>230,314,727,780,784,885,25753,27924,27925,37012,37013,44590,53791,53793,75126</link.rule.ids><backlink>$$Uhttps://www.ncbi.nlm.nih.gov/pubmed/32210324$$D View this record in MEDLINE/PubMed$$Hfree_for_read</backlink></links><search><creatorcontrib>Lin, Kuan-Bo</creatorcontrib><creatorcontrib>Su, Yen-Hsun</creatorcontrib><creatorcontrib>Kaun, Chao-Cheng</creatorcontrib><title>Interfacial effects on leakage currents in Cu/α-cristobalite/Cu junctions</title><title>Scientific reports</title><addtitle>Sci Rep</addtitle><addtitle>Sci Rep</addtitle><description>As the miniaturization trend of integrated circuit continues, the leakage currents flow through the dielectric films insulating the interconnects become a critical issue. However, quantum transport through the mainstream on-chip interfaces between interconnects and dielectrics has not been addressed from first principles yet. Here, using first-principles calculations based on density functional theory and nonequilibrium Green’s function formalism, we investigate the interfacial-dependent leakage currents in the Cu/α-cristobalite/Cu junctions. Our results show that the oxygen-rich interfaces form the lowest-leakage-current junction under small bias voltages, followed by the silicon-rich and oxygen-poor ones. This feature is attributed to their transmission spectra, related to their density of states and charge distributions. However, the oxygen-poor interfacial junction may conversely have a better dielectric strength than others, as its transmission gap, from −2.8 to 3.5 eV, is more symmetry respect to the Fermi level than others.</description><subject>639/766</subject><subject>639/925</subject><subject>Electrodes</subject><subject>Humanities and Social Sciences</subject><subject>Interfaces</subject><subject>Leakage</subject><subject>multidisciplinary</subject><subject>Oxygen</subject><subject>Science</subject><subject>Science (multidisciplinary)</subject><subject>Silicon</subject><subject>Spectrum analysis</subject><subject>Symmetry</subject><issn>2045-2322</issn><issn>2045-2322</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2020</creationdate><recordtype>article</recordtype><sourceid>PIMPY</sourceid><recordid>eNp9kc9O3DAQxi3UChDlBTigSFx6SdcZO05yQUKr0oKQuJSz5djjxUvWBjup1Mfqi_BM9Xa3y59D5-LRzG8-z-gj5KSiXyrK2lniVd21JQVaCmC1KMUeOQTK6xIYwIdX-QE5TmlJc9TQ8arbJwe5mkWAH5LrKz9itEo7NRRoLeoxFcEXA6oHtcBCTzGizzXni_k0e_5d6ujSGHo1uBFn86lYTl6PLvj0iXy0akh4vH2PyN3l1x_z7-XN7ber-cVNqTnUY6lM1zNbKWMFR2X61jRgUDet7ZUW2lJjUaDoWugpb3pDe01b2mnTomUN69gROd_oPk79Co3O60U1yMfoVir-kkE5-bbj3b1chJ-yoR2rocoCn7cCMTxNmEa5cknjMCiPYUoSWMvqqgHOM3r2Dl2GKfp83poCQSFzmYINpWNIKaLdLVNRuXZLbtyS2S351y0p8tDp6zN2I_-8yQDbACm3_ALjy9__kf0DkJOiXA</recordid><startdate>20200324</startdate><enddate>20200324</enddate><creator>Lin, Kuan-Bo</creator><creator>Su, Yen-Hsun</creator><creator>Kaun, Chao-Cheng</creator><general>Nature Publishing Group UK</general><general>Nature Publishing Group</general><scope>C6C</scope><scope>NPM</scope><scope>AAYXX</scope><scope>CITATION</scope><scope>3V.</scope><scope>7X7</scope><scope>7XB</scope><scope>88A</scope><scope>88E</scope><scope>88I</scope><scope>8FE</scope><scope>8FH</scope><scope>8FI</scope><scope>8FJ</scope><scope>8FK</scope><scope>ABUWG</scope><scope>AFKRA</scope><scope>AZQEC</scope><scope>BBNVY</scope><scope>BENPR</scope><scope>BHPHI</scope><scope>CCPQU</scope><scope>DWQXO</scope><scope>FYUFA</scope><scope>GHDGH</scope><scope>GNUQQ</scope><scope>HCIFZ</scope><scope>K9.</scope><scope>LK8</scope><scope>M0S</scope><scope>M1P</scope><scope>M2P</scope><scope>M7P</scope><scope>PIMPY</scope><scope>PQEST</scope><scope>PQQKQ</scope><scope>PQUKI</scope><scope>Q9U</scope><scope>7X8</scope><scope>5PM</scope></search><sort><creationdate>20200324</creationdate><title>Interfacial effects on leakage currents in Cu/α-cristobalite/Cu junctions</title><author>Lin, Kuan-Bo ; Su, Yen-Hsun ; Kaun, Chao-Cheng</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c425t-ad9b3f1adf64eadb8d72dec78fbac6cf0dfe6e6982b047bd0bc0809cd8ef37393</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2020</creationdate><topic>639/766</topic><topic>639/925</topic><topic>Electrodes</topic><topic>Humanities and Social Sciences</topic><topic>Interfaces</topic><topic>Leakage</topic><topic>multidisciplinary</topic><topic>Oxygen</topic><topic>Science</topic><topic>Science (multidisciplinary)</topic><topic>Silicon</topic><topic>Spectrum analysis</topic><topic>Symmetry</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Lin, Kuan-Bo</creatorcontrib><creatorcontrib>Su, Yen-Hsun</creatorcontrib><creatorcontrib>Kaun, Chao-Cheng</creatorcontrib><collection>Springer Nature OA Free Journals</collection><collection>PubMed</collection><collection>CrossRef</collection><collection>ProQuest Central (Corporate)</collection><collection>Health &amp; Medical Collection (ProQuest Medical &amp; Health Databases)</collection><collection>ProQuest Central (purchase pre-March 2016)</collection><collection>Biology Database (Alumni Edition)</collection><collection>Medical Database (Alumni Edition)</collection><collection>Science Database (Alumni Edition)</collection><collection>ProQuest SciTech Collection</collection><collection>ProQuest Natural Science Collection</collection><collection>Hospital Premium Collection</collection><collection>Hospital Premium Collection (Alumni Edition)</collection><collection>ProQuest Central (Alumni) (purchase pre-March 2016)</collection><collection>ProQuest Central (Alumni)</collection><collection>ProQuest Central</collection><collection>ProQuest Central Essentials</collection><collection>Biological Science Collection</collection><collection>ProQuest Central</collection><collection>Natural Science Collection</collection><collection>ProQuest One Community College</collection><collection>ProQuest Central</collection><collection>Health Research Premium Collection</collection><collection>Health Research Premium Collection (Alumni)</collection><collection>ProQuest Central Student</collection><collection>SciTech Premium Collection</collection><collection>ProQuest Health &amp; Medical Complete (Alumni)</collection><collection>ProQuest Biological Science Collection</collection><collection>Health &amp; Medical Collection (Alumni Edition)</collection><collection>PML(ProQuest Medical Library)</collection><collection>Science Database (ProQuest)</collection><collection>Biological Science Database</collection><collection>Publicly Available Content Database</collection><collection>ProQuest One Academic Eastern Edition (DO NOT USE)</collection><collection>ProQuest One Academic</collection><collection>ProQuest One Academic UKI Edition</collection><collection>ProQuest Central Basic</collection><collection>MEDLINE - Academic</collection><collection>PubMed Central (Full Participant titles)</collection><jtitle>Scientific reports</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Lin, Kuan-Bo</au><au>Su, Yen-Hsun</au><au>Kaun, Chao-Cheng</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Interfacial effects on leakage currents in Cu/α-cristobalite/Cu junctions</atitle><jtitle>Scientific reports</jtitle><stitle>Sci Rep</stitle><addtitle>Sci Rep</addtitle><date>2020-03-24</date><risdate>2020</risdate><volume>10</volume><issue>1</issue><spage>5303</spage><epage>5303</epage><pages>5303-5303</pages><artnum>5303</artnum><issn>2045-2322</issn><eissn>2045-2322</eissn><abstract>As the miniaturization trend of integrated circuit continues, the leakage currents flow through the dielectric films insulating the interconnects become a critical issue. However, quantum transport through the mainstream on-chip interfaces between interconnects and dielectrics has not been addressed from first principles yet. Here, using first-principles calculations based on density functional theory and nonequilibrium Green’s function formalism, we investigate the interfacial-dependent leakage currents in the Cu/α-cristobalite/Cu junctions. Our results show that the oxygen-rich interfaces form the lowest-leakage-current junction under small bias voltages, followed by the silicon-rich and oxygen-poor ones. This feature is attributed to their transmission spectra, related to their density of states and charge distributions. However, the oxygen-poor interfacial junction may conversely have a better dielectric strength than others, as its transmission gap, from −2.8 to 3.5 eV, is more symmetry respect to the Fermi level than others.</abstract><cop>London</cop><pub>Nature Publishing Group UK</pub><pmid>32210324</pmid><doi>10.1038/s41598-020-62356-6</doi><tpages>1</tpages><oa>free_for_read</oa></addata></record>
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subjects 639/766
639/925
Electrodes
Humanities and Social Sciences
Interfaces
Leakage
multidisciplinary
Oxygen
Science
Science (multidisciplinary)
Silicon
Spectrum analysis
Symmetry
title Interfacial effects on leakage currents in Cu/α-cristobalite/Cu junctions
url http://sfxeu10.hosted.exlibrisgroup.com/loughborough?ctx_ver=Z39.88-2004&ctx_enc=info:ofi/enc:UTF-8&ctx_tim=2024-12-24T12%3A40%3A14IST&url_ver=Z39.88-2004&url_ctx_fmt=infofi/fmt:kev:mtx:ctx&rfr_id=info:sid/primo.exlibrisgroup.com:primo3-Article-proquest_pubme&rft_val_fmt=info:ofi/fmt:kev:mtx:journal&rft.genre=article&rft.atitle=Interfacial%20effects%20on%20leakage%20currents%20in%20Cu/%CE%B1-cristobalite/Cu%20junctions&rft.jtitle=Scientific%20reports&rft.au=Lin,%20Kuan-Bo&rft.date=2020-03-24&rft.volume=10&rft.issue=1&rft.spage=5303&rft.epage=5303&rft.pages=5303-5303&rft.artnum=5303&rft.issn=2045-2322&rft.eissn=2045-2322&rft_id=info:doi/10.1038/s41598-020-62356-6&rft_dat=%3Cproquest_pubme%3E2382602172%3C/proquest_pubme%3E%3Cgrp_id%3Ecdi_FETCH-LOGICAL-c425t-ad9b3f1adf64eadb8d72dec78fbac6cf0dfe6e6982b047bd0bc0809cd8ef37393%3C/grp_id%3E%3Coa%3E%3C/oa%3E%3Curl%3E%3C/url%3E&rft_id=info:oai/&rft_pqid=2382602172&rft_id=info:pmid/32210324&rfr_iscdi=true