Structural, Optical and Electrical Properties of HfO2 Thin Films Deposited at Low-Temperature Using Plasma-Enhanced Atomic Layer Deposition

• Published in: Materials 2020-04, Vol.13 (9), p.2008
• Main Authors: Kim, Kyoung-Mun, Jang, Jin Sub, Yoon, Soon-Gil, Yun, Ju-Young, Chung, Nak-Kwan
• Format: Article
• Language: English
• Subjects: Atomic layer epitaxy; Carbon; Contaminants; Electrical properties; Hafnium oxide; Leakage current; Low temperature; Optical properties; Plasma etching; Polyethylene terephthalate; Refractivity; Spectrum analysis; Thin films
• ISSN: 1996-1944; 1996-1944
• DOI: 10.3390/ma13092008

HfO2 was deposited at 80–250 °C by plasma-enhanced atomic layer deposition (PEALD), and properties were compared with those obtained by using thermal atomic layer deposition (thermal ALD). The ALD window, i.e., the region where the growth per cycle (GPC) is constant, shifted from high temperatures (150–200 °C) to lower temperatures (80–150 °C) in PEALD. HfO2 deposited at 80 °C by PEALD showed higher density (8.1 g/cm3) than those deposited by thermal ALD (5.3 g/cm3) and a smooth surface (RMS Roughness: 0.2 nm). HfO2 deposited at a low temperature by PEALD showed decreased contaminants compared to thermal ALD deposited HfO2. Values of refractive indices and optical band gap of HfO2 deposited at 80 °C by PEALD (1.9, 5.6 eV) were higher than those obtained by using thermal ALD (1.7, 5.1 eV). Transparency of HfO2 deposited at 80 °C by PEALD on polyethylene terephthalate (PET) was high (> 84%). PET deposited above 80 °C was unable to withstand heat and showed deformation. HfO2 deposited at 80 °C by PEALD showed decreased leakage current from 1.4 × 10−2 to 2.5 × 10−5 A/cm2 and increased capacitance of approximately 21% compared to HfO2 using thermal ALD. Consequently, HfO2 deposited at a low temperature by PEALD showed improved properties compared to HfO2 deposited by thermal ALD.