Ferroelectric Domain Wall Memristor

A domain wall‐enabled memristor is created, in thin film lithium niobate capacitors, which shows up to twelve orders of magnitude variation in resistance. Such dramatic changes are caused by the injection of strongly inclined conducting ferroelectric domain walls, which provide conduits for current...

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Bibliographic Details
Published in:Advanced functional materials 2020-07, Vol.30 (28), p.2000109-n/a
Main Authors: McConville, James P. V., Lu, Haidong, Wang, Bo, Tan, Yueze, Cochard, Charlotte, Conroy, Michele, Moore, Kalani, Harvey, Alan, Bangert, Ursel, Chen, Long‐Qing, Gruverman, Alexei, Gregg, J. Marty
Format: Article
Language:English
Subjects:
Capacitors
Coercivity
Density
Domain walls
Electrical raceways
ferroelectric domain wall
Ferroelectric domains
Ferroelectric materials
Ferroelectricity
Lithium niobates
Materials science
Maxima
memristor
Memristors
Plastic properties
Resistance
Thin films
Voltage pulses
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Summary:A domain wall‐enabled memristor is created, in thin film lithium niobate capacitors, which shows up to twelve orders of magnitude variation in resistance. Such dramatic changes are caused by the injection of strongly inclined conducting ferroelectric domain walls, which provide conduits for current flow between electrodes. Varying the magnitude of the applied electric‐field pulse, used to induce switching, alters the extent to which polarization reversal occurs; this systematically changes the density of the injected conducting domain walls in the ferroelectric layer and hence the resistivity of the capacitor structure as a whole. Hundreds of distinct conductance states can be produced, with current maxima achieved around the coercive voltage, where domain wall density is greatest, and minima associated with the almost fully switched ferroelectric (few domain walls). Significantly, this “domain wall memristor” demonstrates a plasticity effect: when a succession of voltage pulses of constant magnitude is applied, the resistance changes. Resistance plasticity opens the way for the domain wall memristor to be considered for artificial synapse applications in neuromorphic circuits. By changing the density of conducting ferroelectric domain walls that straddle the interelectrode gap, it is shown that a large number of different direct current resistance states can be created, in parallel‐plate thin film lithium niobate capacitors. Surprisingly, such microstructural manipulation can result in colossal changes in device resistance (over twelve orders of magnitude).
ISSN:1616-301X
1616-3028
DOI:10.1002/adfm.202000109