Contactless Measurements of Carrier Concentrations in InGaAs Layers for Utilizing in InP-Based Quantum Cascade Lasers by Employing Optical Spectroscopy

The precise determination of carrier concentration in doped semiconductor materials and nanostructures is of high importance. Many parameters of an operational device are dependent on the proper carrier concentration or its distribution in both the active area as well as in the passive parts as the...

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Bibliographic Details
Published in:Materials 2020-07, Vol.13 (14), p.3109
Main Authors: Kurka, Marcin, Rygała, Michał, Sęk, Grzegorz, Gutowski, Piotr, Pierściński, Kamil, Motyka, Marcin
Format: Article
Language:English
Subjects:
Carrier density
Claddings
Fourier transforms
Indium gallium arsenides
Insulators
Lasers
Light
Mercury cadmium telluride
Molecular beam epitaxy
Multilayers
Plasma
Process controls
Quantum cascade lasers
Semiconductor materials
Semiconductors
Spectrum analysis
Waveguides
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Summary:The precise determination of carrier concentration in doped semiconductor materials and nanostructures is of high importance. Many parameters of an operational device are dependent on the proper carrier concentration or its distribution in both the active area as well as in the passive parts as the waveguide claddings. Determining those in a nondestructive manner is, on the one hand, demanded for the fabrication process efficiency, but on the other, challenging experimentally, especially for complex multilayer systems. Here, we present the results of carrier concentration determination in In0.53Ga0.47As layers, designed to be a material forming quantum cascade laser active areas, using a direct and contactless method utilizing the Berreman effect, and employing Fourier-transform infrared (FTIR) spectroscopy. The results allowed us to precisely determine the free carrier concentration versus changes in the nominal doping level and provide feedback regarding the technological process by indicating the temperature adjustment of the dopant source.
ISSN:1996-1944
1996-1944
DOI:10.3390/ma13143109