Weak Localization in Polycrystalline Tin Dioxide Films

The electrical and magnetotransport properties of nanocrystalline tin dioxide films were studied in the temperature range of 4–300 K and in magnetic fields up to 8 T. SnO2−δ films were fabricated by reactive direct current (DC) magnetron sputtering of a tin target with following 2 stage temperature...

Full description

Saved in:
Bibliographic Details
Published in:Materials 2020-11, Vol.13 (23), p.5415
Main Authors: Ksenevich, Vitaly, Dorosinets, Vladimir, Adamchuk, Dzmitry, Macutkevic, Jan, Banys, Juras
Format: Article
Language:English
Subjects:
Annealing
Dioxides
Direct current
Electrical resistivity
Glass substrates
Heat
Localization
Magnetic fields
Magnetic properties
Magnetoresistance
Magnetoresistivity
Magnetron sputtering
Nanocrystals
Plasma
Point defects
Tin dioxide
Transport properties
Citations: Items that this one cites
Online Access:Get full text
Tags: Add Tag
No Tags, Be the first to tag this record!
Description
Summary:The electrical and magnetotransport properties of nanocrystalline tin dioxide films were studied in the temperature range of 4–300 K and in magnetic fields up to 8 T. SnO2−δ films were fabricated by reactive direct current (DC) magnetron sputtering of a tin target with following 2 stage temperature annealing of synthesized samples. The nanocrystalline rutile structure of films was confirmed by X-ray diffraction analysis. The temperature dependences of the resistance R(T) and the negative magnetoresistance (MR) were explained within the frame of a model, taking into account quantum corrections to the classical Drude conductivity. Extracted from the R(T) and R(B) dependences electron dephasing length values indicate the 3D character of the weak localization (WL) in our samples.
ISSN:1996-1944
1996-1944
DOI:10.3390/ma13235415