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Laser vibrational excitation of radicals to prevent crystallinity degradation caused by boron doping in diamond
Pursuing high-level doping without deteriorating crystallinity is prohibitively difficult but scientifically crucial to unleashing the hidden power of materials. This study demonstrates an effective route for maintaining lattice integrity during the combustion chemical vapor deposition of highly con...
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Published in: | Science advances 2021-01, Vol.7 (4) |
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container_issue | 4 |
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container_title | Science advances |
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creator | Fan, L Constantin, L Wu, Z P McElveen, K A Chen, X G He, T Wang, F Debiemme-Chouvy, C Cui, B Lai, R Y Li, X Silvain, J F Lu, Y F |
description | Pursuing high-level doping without deteriorating crystallinity is prohibitively difficult but scientifically crucial to unleashing the hidden power of materials. This study demonstrates an effective route for maintaining lattice integrity during the combustion chemical vapor deposition of highly conductive boron-doped diamonds (BDDs) through laser vibrational excitation of a growth-critical radical, boron dihydride (BH
). The improved diamond crystallinity is attributed to a laser-enabled, thermal nonequilibrium suppression of the relative abundance of boron hydrides (BH), whose excessive presence induces boron segregation and disturbs the crystallization. The BDDs show a boron concentration of 4.3 × 10
cm
, a film resistivity of 28.1 milliohm·cm, and hole mobility of 55.6 cm
V
s
, outperforming a commercial BDD. The highly conductive and crystalline BDDs exhibit enhanced efficiency in sensing glucose, confirming the advantages of laser excitation in producing high-performance BDD sensors. Regaining crystallinity with laser excitation in doping process could remove the long-standing bottlenecks in semiconductor industry. |
doi_str_mv | 10.1126/sciadv.abc7547 |
format | article |
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). The improved diamond crystallinity is attributed to a laser-enabled, thermal nonequilibrium suppression of the relative abundance of boron hydrides (BH), whose excessive presence induces boron segregation and disturbs the crystallization. The BDDs show a boron concentration of 4.3 × 10
cm
, a film resistivity of 28.1 milliohm·cm, and hole mobility of 55.6 cm
V
s
, outperforming a commercial BDD. The highly conductive and crystalline BDDs exhibit enhanced efficiency in sensing glucose, confirming the advantages of laser excitation in producing high-performance BDD sensors. Regaining crystallinity with laser excitation in doping process could remove the long-standing bottlenecks in semiconductor industry.</description><identifier>ISSN: 2375-2548</identifier><identifier>EISSN: 2375-2548</identifier><identifier>DOI: 10.1126/sciadv.abc7547</identifier><identifier>PMID: 33523921</identifier><language>eng</language><publisher>United States: American Association for the Advancement of Science (AAAS)</publisher><subject>Chemical Sciences ; Engineering ; Material chemistry ; Materials Science ; SciAdv r-articles</subject><ispartof>Science advances, 2021-01, Vol.7 (4)</ispartof><rights>Copyright © 2021 The Authors, some rights reserved; exclusive licensee American Association for the Advancement of Science. No claim to original U.S. Government Works. Distributed under a Creative Commons Attribution NonCommercial License 4.0 (CC BY-NC).</rights><rights>Attribution - NonCommercial</rights><rights>Copyright © 2021 The Authors, some rights reserved; exclusive licensee American Association for the Advancement of Science. No claim to original U.S. Government Works. Distributed under a Creative Commons Attribution NonCommercial License 4.0 (CC BY-NC). 2021 The Authors</rights><lds50>peer_reviewed</lds50><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c424t-c3db809585960400aebc67991e2aa482c26bf70fa1e4bf1d44519ebc813401d63</citedby><cites>FETCH-LOGICAL-c424t-c3db809585960400aebc67991e2aa482c26bf70fa1e4bf1d44519ebc813401d63</cites><orcidid>0000-0003-1091-0254 ; 0000-0001-7171-6039 ; 0000-0003-2477-4484 ; 0000-0002-5881-6833 ; 0000-0003-4909-4338 ; 0000-0002-1006-3027 ; 0000-0002-1732-9481 ; 0000-0002-5942-1999 ; 0000-0002-0042-4618 ; 0000-0002-8283-0651 ; 0000-0002-0585-6698 ; 0000-0001-6550-7222</orcidid></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktopdf>$$Uhttps://www.ncbi.nlm.nih.gov/pmc/articles/PMC7817095/pdf/$$EPDF$$P50$$Gpubmedcentral$$Hfree_for_read</linktopdf><linktohtml>$$Uhttps://www.ncbi.nlm.nih.gov/pmc/articles/PMC7817095/$$EHTML$$P50$$Gpubmedcentral$$Hfree_for_read</linktohtml><link.rule.ids>230,314,727,780,784,885,2884,2885,27924,27925,53791,53793</link.rule.ids><backlink>$$Uhttps://www.ncbi.nlm.nih.gov/pubmed/33523921$$D View this record in MEDLINE/PubMed$$Hfree_for_read</backlink><backlink>$$Uhttps://hal.sorbonne-universite.fr/hal-03120211$$DView record in HAL$$Hfree_for_read</backlink></links><search><creatorcontrib>Fan, L</creatorcontrib><creatorcontrib>Constantin, L</creatorcontrib><creatorcontrib>Wu, Z P</creatorcontrib><creatorcontrib>McElveen, K A</creatorcontrib><creatorcontrib>Chen, X G</creatorcontrib><creatorcontrib>He, T</creatorcontrib><creatorcontrib>Wang, F</creatorcontrib><creatorcontrib>Debiemme-Chouvy, C</creatorcontrib><creatorcontrib>Cui, B</creatorcontrib><creatorcontrib>Lai, R Y</creatorcontrib><creatorcontrib>Li, X</creatorcontrib><creatorcontrib>Silvain, J F</creatorcontrib><creatorcontrib>Lu, Y F</creatorcontrib><title>Laser vibrational excitation of radicals to prevent crystallinity degradation caused by boron doping in diamond</title><title>Science advances</title><addtitle>Sci Adv</addtitle><description>Pursuing high-level doping without deteriorating crystallinity is prohibitively difficult but scientifically crucial to unleashing the hidden power of materials. This study demonstrates an effective route for maintaining lattice integrity during the combustion chemical vapor deposition of highly conductive boron-doped diamonds (BDDs) through laser vibrational excitation of a growth-critical radical, boron dihydride (BH
). The improved diamond crystallinity is attributed to a laser-enabled, thermal nonequilibrium suppression of the relative abundance of boron hydrides (BH), whose excessive presence induces boron segregation and disturbs the crystallization. The BDDs show a boron concentration of 4.3 × 10
cm
, a film resistivity of 28.1 milliohm·cm, and hole mobility of 55.6 cm
V
s
, outperforming a commercial BDD. The highly conductive and crystalline BDDs exhibit enhanced efficiency in sensing glucose, confirming the advantages of laser excitation in producing high-performance BDD sensors. Regaining crystallinity with laser excitation in doping process could remove the long-standing bottlenecks in semiconductor industry.</description><subject>Chemical Sciences</subject><subject>Engineering</subject><subject>Material chemistry</subject><subject>Materials Science</subject><subject>SciAdv r-articles</subject><issn>2375-2548</issn><issn>2375-2548</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2021</creationdate><recordtype>article</recordtype><recordid>eNpdkctPGzEQxi0EAkS5cqx8hENSjx_7uCAhVEqlSL2UszV-bDDarFN7s2r--xo2RbQnz9i_7xuPPkKugC0BePUl24BuWqKxtZL1ETnnolYLrmRz_KE-I5c5vzDGQFaVgvaUnAmhuGg5nJO4wuwTnYJJOIY4YE_9bxvGt4bGjiZ0wWKf6RjpNvnJDyO1aZ9H7PswhHFPnV8XaBZY3GXvqNlTE1PpXdyGYU1DqQJu4uA-kZOuuPnLw3lBnh6-_rx_XKx-fPt-f7daWMnluLDCmYa1qlFtxSRj6I2t6rYFzxFlwy2vTFezDsFL04GTsixWmAaEZOAqcUFuZ9_tzmy8s-XbCXu9TWGDaa8jBv3vyxCe9TpOum6gLoOLwc1s8Pyf7PFupV_vmADOOMAEhb0-DEvx187nUW9Ctr7vcfBxlzWXjVLAoW4LupxRm2LOyXfv3sD0a6h6DlUfQi2Czx8Xecf_Rij-AJLLoZQ</recordid><startdate>20210120</startdate><enddate>20210120</enddate><creator>Fan, L</creator><creator>Constantin, L</creator><creator>Wu, Z P</creator><creator>McElveen, K A</creator><creator>Chen, X G</creator><creator>He, T</creator><creator>Wang, F</creator><creator>Debiemme-Chouvy, C</creator><creator>Cui, B</creator><creator>Lai, R Y</creator><creator>Li, X</creator><creator>Silvain, J F</creator><creator>Lu, Y F</creator><general>American Association for the Advancement of Science (AAAS)</general><general>American Association for the Advancement of Science</general><scope>NPM</scope><scope>AAYXX</scope><scope>CITATION</scope><scope>7X8</scope><scope>1XC</scope><scope>VOOES</scope><scope>5PM</scope><orcidid>https://orcid.org/0000-0003-1091-0254</orcidid><orcidid>https://orcid.org/0000-0001-7171-6039</orcidid><orcidid>https://orcid.org/0000-0003-2477-4484</orcidid><orcidid>https://orcid.org/0000-0002-5881-6833</orcidid><orcidid>https://orcid.org/0000-0003-4909-4338</orcidid><orcidid>https://orcid.org/0000-0002-1006-3027</orcidid><orcidid>https://orcid.org/0000-0002-1732-9481</orcidid><orcidid>https://orcid.org/0000-0002-5942-1999</orcidid><orcidid>https://orcid.org/0000-0002-0042-4618</orcidid><orcidid>https://orcid.org/0000-0002-8283-0651</orcidid><orcidid>https://orcid.org/0000-0002-0585-6698</orcidid><orcidid>https://orcid.org/0000-0001-6550-7222</orcidid></search><sort><creationdate>20210120</creationdate><title>Laser vibrational excitation of radicals to prevent crystallinity degradation caused by boron doping in diamond</title><author>Fan, L ; Constantin, L ; Wu, Z P ; McElveen, K A ; Chen, X G ; He, T ; Wang, F ; Debiemme-Chouvy, C ; Cui, B ; Lai, R Y ; Li, X ; Silvain, J F ; Lu, Y F</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c424t-c3db809585960400aebc67991e2aa482c26bf70fa1e4bf1d44519ebc813401d63</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2021</creationdate><topic>Chemical Sciences</topic><topic>Engineering</topic><topic>Material chemistry</topic><topic>Materials Science</topic><topic>SciAdv r-articles</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Fan, L</creatorcontrib><creatorcontrib>Constantin, L</creatorcontrib><creatorcontrib>Wu, Z P</creatorcontrib><creatorcontrib>McElveen, K A</creatorcontrib><creatorcontrib>Chen, X G</creatorcontrib><creatorcontrib>He, T</creatorcontrib><creatorcontrib>Wang, F</creatorcontrib><creatorcontrib>Debiemme-Chouvy, C</creatorcontrib><creatorcontrib>Cui, B</creatorcontrib><creatorcontrib>Lai, R Y</creatorcontrib><creatorcontrib>Li, X</creatorcontrib><creatorcontrib>Silvain, J F</creatorcontrib><creatorcontrib>Lu, Y F</creatorcontrib><collection>PubMed</collection><collection>CrossRef</collection><collection>MEDLINE - Academic</collection><collection>Hyper Article en Ligne (HAL)</collection><collection>Hyper Article en Ligne (HAL) (Open Access)</collection><collection>PubMed Central (Full Participant titles)</collection><jtitle>Science advances</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Fan, L</au><au>Constantin, L</au><au>Wu, Z P</au><au>McElveen, K A</au><au>Chen, X G</au><au>He, T</au><au>Wang, F</au><au>Debiemme-Chouvy, C</au><au>Cui, B</au><au>Lai, R Y</au><au>Li, X</au><au>Silvain, J F</au><au>Lu, Y F</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Laser vibrational excitation of radicals to prevent crystallinity degradation caused by boron doping in diamond</atitle><jtitle>Science advances</jtitle><addtitle>Sci Adv</addtitle><date>2021-01-20</date><risdate>2021</risdate><volume>7</volume><issue>4</issue><issn>2375-2548</issn><eissn>2375-2548</eissn><abstract>Pursuing high-level doping without deteriorating crystallinity is prohibitively difficult but scientifically crucial to unleashing the hidden power of materials. This study demonstrates an effective route for maintaining lattice integrity during the combustion chemical vapor deposition of highly conductive boron-doped diamonds (BDDs) through laser vibrational excitation of a growth-critical radical, boron dihydride (BH
). The improved diamond crystallinity is attributed to a laser-enabled, thermal nonequilibrium suppression of the relative abundance of boron hydrides (BH), whose excessive presence induces boron segregation and disturbs the crystallization. The BDDs show a boron concentration of 4.3 × 10
cm
, a film resistivity of 28.1 milliohm·cm, and hole mobility of 55.6 cm
V
s
, outperforming a commercial BDD. The highly conductive and crystalline BDDs exhibit enhanced efficiency in sensing glucose, confirming the advantages of laser excitation in producing high-performance BDD sensors. Regaining crystallinity with laser excitation in doping process could remove the long-standing bottlenecks in semiconductor industry.</abstract><cop>United States</cop><pub>American Association for the Advancement of Science (AAAS)</pub><pmid>33523921</pmid><doi>10.1126/sciadv.abc7547</doi><orcidid>https://orcid.org/0000-0003-1091-0254</orcidid><orcidid>https://orcid.org/0000-0001-7171-6039</orcidid><orcidid>https://orcid.org/0000-0003-2477-4484</orcidid><orcidid>https://orcid.org/0000-0002-5881-6833</orcidid><orcidid>https://orcid.org/0000-0003-4909-4338</orcidid><orcidid>https://orcid.org/0000-0002-1006-3027</orcidid><orcidid>https://orcid.org/0000-0002-1732-9481</orcidid><orcidid>https://orcid.org/0000-0002-5942-1999</orcidid><orcidid>https://orcid.org/0000-0002-0042-4618</orcidid><orcidid>https://orcid.org/0000-0002-8283-0651</orcidid><orcidid>https://orcid.org/0000-0002-0585-6698</orcidid><orcidid>https://orcid.org/0000-0001-6550-7222</orcidid><oa>free_for_read</oa></addata></record> |
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title | Laser vibrational excitation of radicals to prevent crystallinity degradation caused by boron doping in diamond |
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