Semiconductor-less vertical transistor with ION/IOFF of 106

Semiconductors have long been perceived as a prerequisite for solid-state transistors. Although switching principles for nanometer-scale devices have emerged based on the deployment of two-dimensional (2D) van der Waals heterostructures, tunneling and ballistic currents through short channels are di...

Full description

Saved in:
Bibliographic Details
Published in:Nature communications 2021-02, Vol.12 (1), Article 1000
Main Authors: Lee, Jun-Ho, Shin, Dong Hoon, Yang, Heejun, Jeong, Nae Bong, Park, Do-Hyun, Watanabe, Kenji, Taniguchi, Takashi, Kim, Eunah, Lee, Sang Wook, Jhang, Sung Ho, Park, Bae Ho, Kuk, Young, Chung, Hyun-Jong
Format: Article
Language:English
Subjects:
142/126
639/925
639/925/918
639/925/918/1052
639/925/927
639/925/927/1007
Boron
Boron nitride
Emissions
Extreme environments
Field effect transistors
Field emission
Graphene
Heterostructures
Humanities and Social Sciences
multidisciplinary
Science
Science (multidisciplinary)
Semiconductor devices
Solid state
Switching
Temperature dependence
Transistors
Citations: Items that this one cites
Items that cite this one
Online Access:Get full text
Tags: Add Tag
No Tags, Be the first to tag this record!
Description
Summary:Semiconductors have long been perceived as a prerequisite for solid-state transistors. Although switching principles for nanometer-scale devices have emerged based on the deployment of two-dimensional (2D) van der Waals heterostructures, tunneling and ballistic currents through short channels are difficult to control, and semiconducting channel materials remain indispensable for practical switching. In this study, we report a semiconductor-less solid-state electronic device that exhibits an industry-applicable switching of the ballistic current. This device modulates the field emission barrier height across the graphene-hexagonal boron nitride interface with I ON / I OFF of 10 6 obtained from the transfer curves and adjustable intrinsic gain up to 4, and exhibits unprecedented current stability in temperature range of 15–400 K. The vertical device operation can be optimized with the capacitive coupling in the device geometry. The semiconductor-less switching resolves the long-standing issue of temperature-dependent device performance, thereby extending the potential of 2D van der Waals devices to applications in extreme environments. In field-effect transistors, a semiconducting channel is indispensable for device switching. Here, the authors demonstrate semiconductor-less switching via modulation of the field emission barrier height across a graphene-hBN interface with ON/OFF ratio of 10 6 .
ISSN:2041-1723
2041-1723
DOI:10.1038/s41467-021-21138-y