Characterization of SiO2 Etching Profiles in Pulse-Modulated Capacitively Coupled Plasmas

Although pulse-modulated plasma has overcome various problems encountered during the development of the high aspect ratio contact hole etching process, there is still a lack of understanding in terms of precisely how the pulse-modulated plasma solves the issues. In this research, to gain insight int...

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Bibliographic Details
Published in:Materials 2021-09, Vol.14 (17), p.5036
Main Authors: Cho, Chulhee, You, Kwangho, Kim, Sijun, Lee, Youngseok, Lee, Jangjae, You, Shinjae
Format: Article
Language:English
Subjects:
Bias
Contact holes
Electrodes
Electron density
Energy
Engineering Sciences
Etching
Experiments
High aspect ratio
Optimization
Plasma diagnostics
Plasma etching
Plasma processing
Plasmas
Plasmas (physics)
Semiconductors
Silicon dioxide
Silicon wafers
Simulators
Trenching
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Summary:Although pulse-modulated plasma has overcome various problems encountered during the development of the high aspect ratio contact hole etching process, there is still a lack of understanding in terms of precisely how the pulse-modulated plasma solves the issues. In this research, to gain insight into previously observed phenomena, SiO2 etching characteristics were investigated under various pulsed plasma conditions and analyzed through plasma diagnostics. Specifically, the disappearance of micro-trenching from the use of pulse-modulated plasma is analyzed via self-bias, and the phenomenon that as power off-time increases, the sidewall angle increases is interpreted via radical species density and self-bias. Further, the change from etching to deposition with decreased peak power during processing is understood via self-bias and electron density. It is expected that this research will provide an informative window for the optimization of SiO2 etching and for basic processing databases including plasma diagnosis for advanced plasma processing simulators.
ISSN:1996-1944
1996-1944
DOI:10.3390/ma14175036