Multicolor Emission from Ultraviolet GaN-Based Photonic Quasicrystal Nanopyramid Structure with Semipolar InxGa1−xN/GaN Multiple Quantum Wells

• Published in: Nanoscale research letters 2021-09, Vol.16 (1), p.145-145, Article 145
• Main Authors: Chen, Cheng-Chang, Lin, Hsiang-Ting, Chang, Shih-Pang, Kuo, Hao-Chung, Hung, Hsiao-Wen, Chien, Kuo-Hsiang, Chang, Yu-Choung, Shih, M. H.
• Format: Article
• Language: English
• Subjects: Chemistry and Materials Science; Color; Crystal structure; Efficiency; Emission analysis; Etching; Finite element method; Gallium nitrides; Indium gallium nitrides; Lasers; Lattices; Light emitting diodes; Materials Science; Mathematical models; Molecular Medicine; Nano Express; Nanochemistry; Nanolithography; Nanorods; Nanoscale Science and Technology; Nanotechnology; Nanotechnology and Microengineering; Optical pumping; Photonic crystals; Polymers; Quantum wells; Quasicrystals; Regrowth; Symmetry; Wavelengths; Wells
• ISSN: 1556-276X; 1931-7573; 1556-276X
• DOI: 10.1186/s11671-021-03576-1

In this study, we demonstrated large-area high-quality multi-color emission from the 12-fold symmetric GaN photonic quasicrystal nanorod device which was fabricated using the nanoimprint lithography technology and multiple quantum wells regrowth procedure. High-efficiency blue and green color emission wavelengths of 460 and 520 nm from the regrown In x Ga 1− x N/GaN multiple quantum wells were observed under optical pumping conditions. To confirm the strong coupling between the quantum well emissions and the photonic crystal band-edge resonant modes, the finite-element method was applied to perform a simulation of the 12-fold symmetry photonic quasicrystal lattices.