Status and Prospects of Cubic Silicon Carbide Power Electronics Device Technology

Wide bandgap (WBG) semiconductors are becoming more widely accepted for use in power electronics due to their superior electrical energy efficiencies and improved power densities. Although WBG cubic silicon carbide (3C-SiC) displays a modest bandgap compared to its commercial counterparts (4H-silico...

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Published in:Materials 2021-10, Vol.14 (19), p.5831
Main Authors: Li, Fan, Roccaforte, Fabrizio, Greco, Giuseppe, Fiorenza, Patrick, La Via, Francesco, Pérez-Tomas, Amador, Evans, Jonathan Edward, Fisher, Craig Arthur, Monaghan, Finn Alec, Mawby, Philip Andrew, Jennings, Mike
Format: Article
Language:English
Subjects:
Antiphase boundaries
Bulk density
Contact resistance
Electric contacts
Electric fields
Electronics
Energy
Energy gap
Gallium nitrides
Heat conductivity
Ion implantation
Low temperature
Metal oxide semiconductors
MOS devices
MOSFETs
Review
Semiconductors
Silicon carbide
Stacking faults
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Summary:Wide bandgap (WBG) semiconductors are becoming more widely accepted for use in power electronics due to their superior electrical energy efficiencies and improved power densities. Although WBG cubic silicon carbide (3C-SiC) displays a modest bandgap compared to its commercial counterparts (4H-silicon carbide and gallium nitride), this material has excellent attributes as the WBG semiconductor of choice for low-resistance, reliable diode and MOS devices. At present the material remains firmly in the research domain due to numerous technological impediments that hamper its widespread adoption. The most obvious obstacle is defect-free 3C-SiC; presently, 3C-SiC bulk and heteroepitaxial (on-silicon) display high defect densities such as stacking faults and antiphase boundaries. Moreover, heteroepitaxy 3C-SiC-on-silicon means low temperature processing budgets are imposed upon the system (max. temperature limited to ~1400 °C) limiting selective doping realisation. This paper will give a brief overview of some of the scientific aspects associated with 3C-SiC processing technology in addition to focussing on the latest state of the art results. A particular focus will be placed upon key process steps such as Schottky and ohmic contacts, ion implantation and MOS processing including reliability. Finally, the paper will discuss some device prototypes (diodes and MOSFET) and draw conclusions around the prospects for 3C-SiC devices based upon the processing technology presented.
ISSN:1996-1944
1996-1944
DOI:10.3390/ma14195831