Microstructural Gradational Properties of Sn-Doped Gallium Oxide Heteroepitaxial Layers Grown Using Mist Chemical Vapor Deposition

This study examined the microstructural gradation in Sn-doped, n-type Ga O epitaxial layers grown on a two-inch sapphire substrate using horizontal hot-wall mist chemical vapor deposition (mist CVD). The results revealed that, compared to a single Ga O layer grown using a conventional single-step gr...

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Bibliographic Details
Published in:Materials 2022-01, Vol.15 (3), p.1050
Main Authors: Kim, Kyoung-Ho, Ha, Minh-Tan, Lee, Heesoo, Kim, Minho, Nam, Okhyun, Shin, Yun-Ji, Jeong, Seong-Min, Bae, Si-Young
Format: Article
Language:English
Subjects:
Carrier density
Carrier mobility
Chemical vapor deposition
Concentration gradient
Crystal structure
Electrical properties
Electronic devices
Epitaxial growth
Epitaxial layers
Flow velocity
Gallium oxides
Molecular beam epitaxy
Organic chemicals
Sapphire
Scanning electron microscopy
Scattering
Standard deviation
Substrates
Surface roughness
Tin
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Summary:This study examined the microstructural gradation in Sn-doped, n-type Ga O epitaxial layers grown on a two-inch sapphire substrate using horizontal hot-wall mist chemical vapor deposition (mist CVD). The results revealed that, compared to a single Ga O layer grown using a conventional single-step growth, the double Ga O layers grown using a two-step growth process exhibited excellent thickness uniformity, surface roughness, and crystal quality. In addition, the spatial gradient of carrier concentration in the upper layer of the double layers was significantly affected by the mist flow velocity at the surface, regardless of the dopant concentration distribution of the underlying layer. Furthermore, the electrical properties of the single Ga O layer could be attributed to various scattering mechanisms, whereas the carrier mobility of the double Ga O layers could be attributed to Coulomb scattering owing to the heavily doped condition. It strongly suggests the two-step-grown, lightly-Sn-doped Ga O layer is feasible for high power electronic devices.
ISSN:1996-1944
1996-1944
DOI:10.3390/ma15031050