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Performance Comparison of CdTe:Na, CdTe:As, and CdTe:P Single Crystals for Solar Cell Applications
We compared thermal stability, open-circuit voltage, short-circuit current, and fill factor values of single-crystal Cadmium telluride (CdTe) grown using the vertical Bridgman (VB) technique and doped with group V elements (phosphorus and arsenic), and group Ⅰ element (sodium), followed by an anneal...
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Published in: | Materials 2022-02, Vol.15 (4), p.1408 |
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creator | Kim, Sangsu Kim, Deok Hong, Jinki Elmughrabi, Abdallah Melis, Alima Yeom, Jung-Yeol Park, Chansun Cho, Shinhaeng |
description | We compared thermal stability, open-circuit voltage, short-circuit current, and fill factor values of single-crystal Cadmium telluride (CdTe) grown using the vertical Bridgman (VB) technique and doped with group V elements (phosphorus and arsenic), and group Ⅰ element (sodium), followed by an annealing process. The sodium-doped CdTe maintained a hole density of 10
cm
or higher; after annealing for a long time, this decreased to 10
cm
or less. The arsenic-doped CdTe maintained a hole density of approximately 10
cm
even after the annealing process; however its bulk minority carrier lifetime decreased by approximately 10%. The phosphorus-doped CdTe maintained its properties after the annealing process, ultimately achieving a hole density of ~10
cm
and a minority carrier lifetime of ~40 ns. The characteristics of a single-crystal solar cell were evaluated using a solar cell device that contained single-crystal CdTe with various dopants. The sodium-doped sample exhibited poor interfacial properties, and its performance decreased rapidly during annealing. The samples doped with group V elements exhibited stable characteristics even during long-term annealing. We concluded, therefore, that group V elements dopants are more suitable for CdTe single-crystal-based solar cell applications involving thermal stress conditions, such as space missions or extreme fabrication temperature environments. |
doi_str_mv | 10.3390/ma15041408 |
format | article |
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cm
or higher; after annealing for a long time, this decreased to 10
cm
or less. The arsenic-doped CdTe maintained a hole density of approximately 10
cm
even after the annealing process; however its bulk minority carrier lifetime decreased by approximately 10%. The phosphorus-doped CdTe maintained its properties after the annealing process, ultimately achieving a hole density of ~10
cm
and a minority carrier lifetime of ~40 ns. The characteristics of a single-crystal solar cell were evaluated using a solar cell device that contained single-crystal CdTe with various dopants. The sodium-doped sample exhibited poor interfacial properties, and its performance decreased rapidly during annealing. The samples doped with group V elements exhibited stable characteristics even during long-term annealing. We concluded, therefore, that group V elements dopants are more suitable for CdTe single-crystal-based solar cell applications involving thermal stress conditions, such as space missions or extreme fabrication temperature environments.</description><identifier>ISSN: 1996-1944</identifier><identifier>EISSN: 1996-1944</identifier><identifier>DOI: 10.3390/ma15041408</identifier><identifier>PMID: 35207948</identifier><language>eng</language><publisher>Switzerland: MDPI AG</publisher><subject>Annealing ; Arsenic ; Bridgman method ; Cadmium tellurides ; Carrier lifetime ; Circuits ; Crystal growth ; Dopants ; Efficiency ; Hole density ; Interfacial properties ; Lifetime ; Minority carriers ; Open circuit voltage ; Phosphorus ; Photovoltaic cells ; Short circuit currents ; Single crystals ; Sodium ; Solar cells ; Space missions ; Thermal stability ; Thermal stress</subject><ispartof>Materials, 2022-02, Vol.15 (4), p.1408</ispartof><rights>2022 by the authors. Licensee MDPI, Basel, Switzerland. This article is an open access article distributed under the terms and conditions of the Creative Commons Attribution (CC BY) license (https://creativecommons.org/licenses/by/4.0/). Notwithstanding the ProQuest Terms and Conditions, you may use this content in accordance with the terms of the License.</rights><rights>2022 by the authors. 2022</rights><lds50>peer_reviewed</lds50><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c406t-ee72f81e817fed4e165587d0804b7c425d876651ef4551df93516b6124829de3</citedby><cites>FETCH-LOGICAL-c406t-ee72f81e817fed4e165587d0804b7c425d876651ef4551df93516b6124829de3</cites><orcidid>0000-0001-7235-5490 ; 0000-0002-4021-4383 ; 0000-0002-2277-0343 ; 0000-0001-7128-2322</orcidid></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktopdf>$$Uhttps://www.proquest.com/docview/2632956545/fulltextPDF?pq-origsite=primo$$EPDF$$P50$$Gproquest$$Hfree_for_read</linktopdf><linktohtml>$$Uhttps://www.proquest.com/docview/2632956545?pq-origsite=primo$$EHTML$$P50$$Gproquest$$Hfree_for_read</linktohtml><link.rule.ids>230,314,727,780,784,885,25752,27923,27924,37011,37012,44589,53790,53792,74897</link.rule.ids><backlink>$$Uhttps://www.ncbi.nlm.nih.gov/pubmed/35207948$$D View this record in MEDLINE/PubMed$$Hfree_for_read</backlink></links><search><creatorcontrib>Kim, Sangsu</creatorcontrib><creatorcontrib>Kim, Deok</creatorcontrib><creatorcontrib>Hong, Jinki</creatorcontrib><creatorcontrib>Elmughrabi, Abdallah</creatorcontrib><creatorcontrib>Melis, Alima</creatorcontrib><creatorcontrib>Yeom, Jung-Yeol</creatorcontrib><creatorcontrib>Park, Chansun</creatorcontrib><creatorcontrib>Cho, Shinhaeng</creatorcontrib><title>Performance Comparison of CdTe:Na, CdTe:As, and CdTe:P Single Crystals for Solar Cell Applications</title><title>Materials</title><addtitle>Materials (Basel)</addtitle><description>We compared thermal stability, open-circuit voltage, short-circuit current, and fill factor values of single-crystal Cadmium telluride (CdTe) grown using the vertical Bridgman (VB) technique and doped with group V elements (phosphorus and arsenic), and group Ⅰ element (sodium), followed by an annealing process. The sodium-doped CdTe maintained a hole density of 10
cm
or higher; after annealing for a long time, this decreased to 10
cm
or less. The arsenic-doped CdTe maintained a hole density of approximately 10
cm
even after the annealing process; however its bulk minority carrier lifetime decreased by approximately 10%. The phosphorus-doped CdTe maintained its properties after the annealing process, ultimately achieving a hole density of ~10
cm
and a minority carrier lifetime of ~40 ns. The characteristics of a single-crystal solar cell were evaluated using a solar cell device that contained single-crystal CdTe with various dopants. The sodium-doped sample exhibited poor interfacial properties, and its performance decreased rapidly during annealing. The samples doped with group V elements exhibited stable characteristics even during long-term annealing. We concluded, therefore, that group V elements dopants are more suitable for CdTe single-crystal-based solar cell applications involving thermal stress conditions, such as space missions or extreme fabrication temperature environments.</description><subject>Annealing</subject><subject>Arsenic</subject><subject>Bridgman method</subject><subject>Cadmium tellurides</subject><subject>Carrier lifetime</subject><subject>Circuits</subject><subject>Crystal growth</subject><subject>Dopants</subject><subject>Efficiency</subject><subject>Hole density</subject><subject>Interfacial properties</subject><subject>Lifetime</subject><subject>Minority carriers</subject><subject>Open circuit voltage</subject><subject>Phosphorus</subject><subject>Photovoltaic cells</subject><subject>Short circuit currents</subject><subject>Single crystals</subject><subject>Sodium</subject><subject>Solar cells</subject><subject>Space missions</subject><subject>Thermal stability</subject><subject>Thermal stress</subject><issn>1996-1944</issn><issn>1996-1944</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2022</creationdate><recordtype>article</recordtype><sourceid>PIMPY</sourceid><recordid>eNpdkV1LwzAUhoMoOqY3_gAJeCOyadJ8NPVCGMUvGDpw9yFrT7XSJjXphP17M-bHNDc5hzx5Oe95ETqm5IKxjFy2hgrCKSdqBw1olskxzTjf3aoP0FEIbyQexqhKsn10wERC0oyrAVrMwFfOt8YWgHPXdsbXwVnsKpyXc7h6NKNNMQkjbGy5aWb4ubYvTfzhV6E3TcBRAz-7xnicQ9PgSdc1dWH62tlwiPaqiMDR1z1E89ubeX4_nj7dPeST6bjgRPZjgDSpFAVF0wpKDlQKodKSKMIXacETUapUSkGh4kLQssqYoHIhacKjpxLYEF1vZLvlooWyANt70-jO163xK-1Mrf--2PpVv7gPrVRcRSqiwNmXgHfvSwi9butQRDfGglsGnci4cEYlZxE9_Ye-uaW30d2aSjIhBV8Lnm-owrsQPFQ_w1Ci1-Hp3_AifLI9_g_6HRX7BEJhkm4</recordid><startdate>20220214</startdate><enddate>20220214</enddate><creator>Kim, Sangsu</creator><creator>Kim, Deok</creator><creator>Hong, Jinki</creator><creator>Elmughrabi, Abdallah</creator><creator>Melis, Alima</creator><creator>Yeom, Jung-Yeol</creator><creator>Park, Chansun</creator><creator>Cho, Shinhaeng</creator><general>MDPI AG</general><general>MDPI</general><scope>NPM</scope><scope>AAYXX</scope><scope>CITATION</scope><scope>7SR</scope><scope>8FD</scope><scope>8FE</scope><scope>8FG</scope><scope>ABJCF</scope><scope>ABUWG</scope><scope>AFKRA</scope><scope>AZQEC</scope><scope>BENPR</scope><scope>BGLVJ</scope><scope>CCPQU</scope><scope>D1I</scope><scope>DWQXO</scope><scope>HCIFZ</scope><scope>JG9</scope><scope>KB.</scope><scope>PDBOC</scope><scope>PIMPY</scope><scope>PQEST</scope><scope>PQQKQ</scope><scope>PQUKI</scope><scope>PRINS</scope><scope>7X8</scope><scope>5PM</scope><orcidid>https://orcid.org/0000-0001-7235-5490</orcidid><orcidid>https://orcid.org/0000-0002-4021-4383</orcidid><orcidid>https://orcid.org/0000-0002-2277-0343</orcidid><orcidid>https://orcid.org/0000-0001-7128-2322</orcidid></search><sort><creationdate>20220214</creationdate><title>Performance Comparison of CdTe:Na, CdTe:As, and CdTe:P Single Crystals for Solar Cell Applications</title><author>Kim, Sangsu ; Kim, Deok ; Hong, Jinki ; Elmughrabi, Abdallah ; Melis, Alima ; Yeom, Jung-Yeol ; Park, Chansun ; Cho, Shinhaeng</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c406t-ee72f81e817fed4e165587d0804b7c425d876651ef4551df93516b6124829de3</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2022</creationdate><topic>Annealing</topic><topic>Arsenic</topic><topic>Bridgman method</topic><topic>Cadmium tellurides</topic><topic>Carrier lifetime</topic><topic>Circuits</topic><topic>Crystal growth</topic><topic>Dopants</topic><topic>Efficiency</topic><topic>Hole density</topic><topic>Interfacial properties</topic><topic>Lifetime</topic><topic>Minority carriers</topic><topic>Open circuit voltage</topic><topic>Phosphorus</topic><topic>Photovoltaic cells</topic><topic>Short circuit currents</topic><topic>Single crystals</topic><topic>Sodium</topic><topic>Solar cells</topic><topic>Space missions</topic><topic>Thermal stability</topic><topic>Thermal stress</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Kim, Sangsu</creatorcontrib><creatorcontrib>Kim, Deok</creatorcontrib><creatorcontrib>Hong, Jinki</creatorcontrib><creatorcontrib>Elmughrabi, Abdallah</creatorcontrib><creatorcontrib>Melis, Alima</creatorcontrib><creatorcontrib>Yeom, Jung-Yeol</creatorcontrib><creatorcontrib>Park, Chansun</creatorcontrib><creatorcontrib>Cho, Shinhaeng</creatorcontrib><collection>PubMed</collection><collection>CrossRef</collection><collection>Engineered Materials Abstracts</collection><collection>Technology Research Database</collection><collection>ProQuest SciTech Collection</collection><collection>ProQuest Technology Collection</collection><collection>Materials Science & Engineering Collection</collection><collection>ProQuest Central (Alumni)</collection><collection>ProQuest Central</collection><collection>ProQuest Central Essentials</collection><collection>ProQuest Central</collection><collection>Technology Collection</collection><collection>ProQuest One Community College</collection><collection>ProQuest Materials Science Collection</collection><collection>ProQuest Central</collection><collection>SciTech Premium Collection (Proquest) (PQ_SDU_P3)</collection><collection>Materials Research Database</collection><collection>Materials Science Database</collection><collection>Materials Science Collection</collection><collection>Publicly Available Content Database (Proquest) (PQ_SDU_P3)</collection><collection>ProQuest One Academic Eastern Edition (DO NOT USE)</collection><collection>ProQuest One Academic</collection><collection>ProQuest One Academic UKI Edition</collection><collection>ProQuest Central China</collection><collection>MEDLINE - Academic</collection><collection>PubMed Central (Full Participant titles)</collection><jtitle>Materials</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Kim, Sangsu</au><au>Kim, Deok</au><au>Hong, Jinki</au><au>Elmughrabi, Abdallah</au><au>Melis, Alima</au><au>Yeom, Jung-Yeol</au><au>Park, Chansun</au><au>Cho, Shinhaeng</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Performance Comparison of CdTe:Na, CdTe:As, and CdTe:P Single Crystals for Solar Cell Applications</atitle><jtitle>Materials</jtitle><addtitle>Materials (Basel)</addtitle><date>2022-02-14</date><risdate>2022</risdate><volume>15</volume><issue>4</issue><spage>1408</spage><pages>1408-</pages><issn>1996-1944</issn><eissn>1996-1944</eissn><abstract>We compared thermal stability, open-circuit voltage, short-circuit current, and fill factor values of single-crystal Cadmium telluride (CdTe) grown using the vertical Bridgman (VB) technique and doped with group V elements (phosphorus and arsenic), and group Ⅰ element (sodium), followed by an annealing process. The sodium-doped CdTe maintained a hole density of 10
cm
or higher; after annealing for a long time, this decreased to 10
cm
or less. The arsenic-doped CdTe maintained a hole density of approximately 10
cm
even after the annealing process; however its bulk minority carrier lifetime decreased by approximately 10%. The phosphorus-doped CdTe maintained its properties after the annealing process, ultimately achieving a hole density of ~10
cm
and a minority carrier lifetime of ~40 ns. The characteristics of a single-crystal solar cell were evaluated using a solar cell device that contained single-crystal CdTe with various dopants. The sodium-doped sample exhibited poor interfacial properties, and its performance decreased rapidly during annealing. The samples doped with group V elements exhibited stable characteristics even during long-term annealing. We concluded, therefore, that group V elements dopants are more suitable for CdTe single-crystal-based solar cell applications involving thermal stress conditions, such as space missions or extreme fabrication temperature environments.</abstract><cop>Switzerland</cop><pub>MDPI AG</pub><pmid>35207948</pmid><doi>10.3390/ma15041408</doi><orcidid>https://orcid.org/0000-0001-7235-5490</orcidid><orcidid>https://orcid.org/0000-0002-4021-4383</orcidid><orcidid>https://orcid.org/0000-0002-2277-0343</orcidid><orcidid>https://orcid.org/0000-0001-7128-2322</orcidid><oa>free_for_read</oa></addata></record> |
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issn | 1996-1944 1996-1944 |
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source | Publicly Available Content Database (Proquest) (PQ_SDU_P3); Full-Text Journals in Chemistry (Open access); PubMed |
subjects | Annealing Arsenic Bridgman method Cadmium tellurides Carrier lifetime Circuits Crystal growth Dopants Efficiency Hole density Interfacial properties Lifetime Minority carriers Open circuit voltage Phosphorus Photovoltaic cells Short circuit currents Single crystals Sodium Solar cells Space missions Thermal stability Thermal stress |
title | Performance Comparison of CdTe:Na, CdTe:As, and CdTe:P Single Crystals for Solar Cell Applications |
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