Enhanced Switching Reliability of Sol–Gel-Processed Y2O3 RRAM Devices Based on Y2O3 Surface Roughness-Induced Local Electric Field

Sol–gel-processed Y2O3 films were used as active channel layers for resistive random access memory (RRAM) devices. The fabricated ITO/Y2O3/Ag RRAM devices exhibited the properties of conventional bipolar memory devices. A triethylamine stabilizer with a high vapor pressure and low surface tension wa...

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Bibliographic Details
Published in:Materials 2022-03, Vol.15 (5), p.1943
Main Authors: Kim, Do-Won, Kim, Hyeon-Joong, Lee, Won-Yong, Kim, Kyoungdu, Lee, Sin-Hyung, Bae, Jin-Hyuk, Kang, In-Man, Kim, Kwangeun, Jang, Jaewon
Format: Article
Language:English
Subjects:
Annealing
Convective flow
Electric fields
Electrodes
Glass substrates
High temperature
Memory devices
Morphology
Nanocrystals
Nitrates
Random access memory
Reliability
Scanning electron microscopy
Sol-gel processes
Solvents
Spectrum analysis
Surface roughness
Surface tension
Switching
Transistors
Triethylamine
Vapor pressure
Yttrium oxide
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Summary:Sol–gel-processed Y2O3 films were used as active channel layers for resistive random access memory (RRAM) devices. The fabricated ITO/Y2O3/Ag RRAM devices exhibited the properties of conventional bipolar memory devices. A triethylamine stabilizer with a high vapor pressure and low surface tension was added to realize the local electric field area. During drying and high-temperature post-annealing processes, the large convective flow enhanced the surface elevation, and the increased –OH groups accelerated the hydrolysis reaction and aggregation. These phenomena afforded Y2O3 films with an uneven surface morphology and an increased surface roughness. The increased roughness of the Y2O3 films attributable to the triethylamine stabilizer enhanced the local electrical field, improved device reliability, and achieved successful repetition of the switching properties over an extended period.
ISSN:1996-1944
1996-1944
DOI:10.3390/ma15051943