Flexible Sol-Gel—Processed Y2O3 RRAM Devices Obtained via UV/Ozone-Assisted Photochemical Annealing Process

Flexible indium tin oxide (ITO)/Y2O3/Ag resistive random access memory (RRAM) devices were successfully fabricated using a thermal-energy-free ultraviolet (UV)/ozone-assisted photochemical annealing process. Using the UV/ozone-assisted photochemical process, the organic residue can be eliminated, an...

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Bibliographic Details
Published in:Materials 2022-03, Vol.15 (5), p.1899
Main Authors: Kim, Hyeon-Joong, Kim, Do-Won, Lee, Won-Yong, Kim, Kyoungdu, Lee, Sin-Hyung, Bae, Jin-Hyuk, Kang, In-Man, Kim, Kwangeun, Jang, Jaewon
Format: Article
Language:English
Subjects:
Annealing
Electrodes
Indium tin oxides
Leakage current
Memory devices
Microscopy
Ozone
Polyethylene terephthalate
Random access memory
Sol-gel processes
Spectrum analysis
Substrates
Transistors
Yttrium oxide
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Summary:Flexible indium tin oxide (ITO)/Y2O3/Ag resistive random access memory (RRAM) devices were successfully fabricated using a thermal-energy-free ultraviolet (UV)/ozone-assisted photochemical annealing process. Using the UV/ozone-assisted photochemical process, the organic residue can be eliminated, and thinner and smother Y2O3 films than those formed using other methods can be fabricated. The flexible UV/ozone-assisted photochemical annealing process-based ITO/Y2O3/Ag RRAM devices exhibited the properties of conventional bipolar RRAM without any forming process. Furthermore, the pure and amorphous-phase Y2O3 films formed via this process showed a decreased leakage current and an increased high-resistance status (HRS) compared with the films formed using other methods. Therefore, RRAM devices can be realized on plastic substrates using a thermal-energy-free UV/ozone-assisted photochemical annealing process. The fabricated devices exhibited a resistive window (ratio of HRS/low-resistance status (LRS)) of >104, with the HRS and LRS values remaining almost the same (i.e., limited deterioration occurred) for 104 s and up to 102 programming/erasing operation cycles.
ISSN:1996-1944
1996-1944
DOI:10.3390/ma15051899