Alternating Current Field Effects in Atomically Ferroelectric Ultrathin Films

In this work, atomically K Na NbO thin films are taken as examples to investigate the reversible and irreversible effects in a horizon plane, i.e., the changes of domain structures, phase states, free energies, etc., under a z-axis alternating current field via a phase-field method. The simulation r...

Full description

Saved in:
Bibliographic Details
Published in:Materials 2022-03, Vol.15 (7), p.2506
Main Authors: Cao, Jinming, Liu, Mengxia, Liu, Zhonglei, Hou, Hua, Zhao, Yuhong
Format: Article
Language:English
Subjects:
Alternating current
Domain walls
Electric fields
Electric properties
Energy
Energy storage
Ferroelectricity
Ferroelectrics
Phase transitions
Point defects
Switching theory
Thin films
Citations: Items that this one cites
Items that cite this one
Online Access:Get full text
Tags: Add Tag
No Tags, Be the first to tag this record!
Description
Summary:In this work, atomically K Na NbO thin films are taken as examples to investigate the reversible and irreversible effects in a horizon plane, i.e., the changes of domain structures, phase states, free energies, etc., under a z-axis alternating current field via a phase-field method. The simulation results show the driving forces during the charging and discharging process, where there is a variation for the angles of the domain walls from 180° to 90° (and then an increase to 135°), which are the external electric field and domain wall evolution, respectively. As for the phase states, there is a transformation between the orthorhombic and rhombohedral phases which can't be explained by the traditional polarization switching theory. This work provides a reasonable understanding of the alternating current field effect, which is essential in information and energy storage.
ISSN:1996-1944
1996-1944
DOI:10.3390/ma15072506