Carbon and Manganese in Semi-Insulating Bulk GaN Crystals

Co-doping with manganese and carbon was performed in gallium nitride grown by halide vapor phase epitaxy method. Native seeds of high structural quality were used. The crystallized material was examined in terms of its structural, optical, and electrical properties. For that purpose, different chara...

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Bibliographic Details
Published in:Materials 2022-03, Vol.15 (7), p.2379
Main Authors: Amilusik, Mikolaj, Zajac, Marcin, Sochacki, Tomasz, Lucznik, Boleslaw, Fijalkowski, Michal, Iwinska, Malgorzata, Wlodarczyk, Damian, Somakumar, Ajeesh Kumar, Suchocki, Andrzej, Bockowski, Michal
Format: Article
Language:English
Subjects:
Carbon
Crystal growth
Crystallization
Crystals
Electrical properties
Epitaxial growth
Gallium nitrides
Hall effect
Lasers
Low temperature
Manganese
Mechanical properties
Morphology
Nitrogen
Optical properties
Photoluminescence
Physical properties
Raman spectroscopy
Seeds
Temperature dependence
Vapor phase epitaxy
Vapor phases
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Summary:Co-doping with manganese and carbon was performed in gallium nitride grown by halide vapor phase epitaxy method. Native seeds of high structural quality were used. The crystallized material was examined in terms of its structural, optical, and electrical properties. For that purpose, different characterization methods: x-ray diffraction, Raman spectroscopy, low-temperature photoluminescence, and temperature-dependent Hall effect measurements, were applied. The physical properties of the co-doped samples were compared with the properties of crystals grown in the same reactor, on similar seeds, but doped only with manganese or carbon. A comparison of the electrical and optical properties allowed to determine the role of manganese and carbon in doped and co-doped gallium nitride crystals.
ISSN:1996-1944
1996-1944
DOI:10.3390/ma15072379