Flexible electric-double-layer thin film transistors based on a vertical InGaZnO4 channel

Flexible electric-double-layer (EDL) thin film transistors (TFTs) based on a vertical InGaZnO4 (IGZO) channel are fabricated at room temperature. Such TFTs show a low operation voltage of 1.0 V due to the large specific gate capacitance of 3.8 μF cm−2 related to electric-double-layer formation. The...

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Bibliographic Details
Published in:RSC advances 2021-05, Vol.11 (29), p.17910-17913
Main Authors: Liuhui Lei, Tan, Yuanyuan, Yuan, Xing, Dou, Wei, Zhang, Jiale, Wang, Yongkang, Zeng, Sizhe, Deng, Shenyi, Guo, Haoting, Zhou, Weichang, Tang, Dongsheng
Format: Article
Language:English
Subjects:
Chemistry
Flexible components
Indium gallium zinc oxide
Low voltage
Room temperature
Semiconductor devices
Thin film transistors
Thin films
Threshold voltage
Transistors
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Summary:Flexible electric-double-layer (EDL) thin film transistors (TFTs) based on a vertical InGaZnO4 (IGZO) channel are fabricated at room temperature. Such TFTs show a low operation voltage of 1.0 V due to the large specific gate capacitance of 3.8 μF cm−2 related to electric-double-layer formation. The threshold voltage, drain current on/off ratio and subthreshold swing are estimated to be −0.1 V, 1.2 × 106 and 80 mV per decade, respectively. The combination of low voltage, high current on-to-off ratio and room temperature processing make the flexible vertical-IGZO-channel TFTs very promising for low-power portable flexible electronics applications.
ISSN:2046-2069
DOI:10.1039/d1ra02155a