Room-temperature synthesis of near-ultraviolet light-excited Tb3+-doped NaBiF4 green-emitting nanoparticles for solid-state lighting

• Published in: RSC advances 2018-01, Vol.8 (47), p.26676-26681
• Main Authors: Du, Peng, Hua, Yongbin, Yu, Jae Su
• Format: Article
• Language: English
• Subjects: Chemistry; Color; Diodes; Dipole interactions; Electric dipoles; Emission analysis; Emission spectra; Light emitting diodes; Lighting; Nanoparticles; Photoluminescence; Quenching; Room temperature; Solid state; Temperature dependence; Ultraviolet radiation
• ISSN: 2046-2069
• DOI: 10.1039/c8ra05284k

We reported a facile reaction technique to prepare Tb 3+ -doped NaBiF 4 green-emitting nanoparticles at room temperature. Under 378 nm excitation, the prepared samples exhibited the featured emissions of Tb 3+ ions and the green emission located at 543 nm corresponding to the 5 D 0 → 7 F 4 transition was observed in the photoluminescence (PL) emission spectra. The PL emission intensity relied on the dopant concentration and its optimum value was determined to be 50 mol%. The involved concentration quenching mechanism was dominated by the electric dipole-dipole interaction and the critical distance was evaluated to be around 10.4 Å. Meanwhile, the color coordinate and color purity of the obtained emission were revealed to be (0.328, 0.580) and 62.4%, respectively. The thermal quenching performance of the synthesized nanoparticles was analyzed using the temperature-dependent PL emission spectra and the activation energy was calculated to be 0.39 eV. By integrating a near-ultraviolet chip with the prepared nanoparticles, a dazzling green light-emitting diode was fabricated to explore the feasibility of the Tb 3+ -doped NaBiF 4 nanoparticles for solid-state lighting applications. We reported a facile reaction technique to prepare Tb 3+ -doped NaBiF 4 green-emitting nanoparticles at room temperature.