Improved Ion/Ioff Current Ratio and Dynamic Resistance of a p-GaN High-Electron-Mobility Transistor Using an Al0.5GaN Etch-Stop Layer

In this study, we investigated enhance mode (E-mode) p-GaN/AlGaN/GaN high-electron-mobility transistors (HEMTs) with an Al0.5GaN etch-stop layer. Compared with an AlN etch-stop layer, the Al0.5GaN etch-stop layer not only reduced lattice defects but engendered improved DC performance in the device;...

Full description

Saved in:
Bibliographic Details
Published in:Materials 2022-05, Vol.15 (10), p.3503
Main Authors: Wang, Hsiang-Chun, Liu, Chia-Hao, Huang, Chong-Rong, Shih, Min-Hung, Chiu, Hsien-Chin, Kao, Hsuan-Ling, Liu, Xinke
Format: Article
Language:English
Subjects:
Aluminum gallium nitrides
Aluminum nitride
Crystal defects
Current leakage
Gallium nitrides
High electron mobility transistors
Leakage current
Organic chemicals
Plasma etching
Semiconductor devices
Substrates
Transistors
Citations: Items that this one cites
Items that cite this one
Online Access:Get full text
Tags: Add Tag
No Tags, Be the first to tag this record!
Description
Summary:In this study, we investigated enhance mode (E-mode) p-GaN/AlGaN/GaN high-electron-mobility transistors (HEMTs) with an Al0.5GaN etch-stop layer. Compared with an AlN etch-stop layer, the Al0.5GaN etch-stop layer not only reduced lattice defects but engendered improved DC performance in the device; this can be attributed to the lattice match between the layer and substrate. The results revealed that the Al0.5GaN etch-stop layer could reduce dislocation by 37.5% and improve device characteristics. Compared with the device with the AlN etch-stop layer, the p-GaN HEMT with the Al0.5GaN etch-stop layer achieved a higher drain current on/off ratio (2.47 × 107), a lower gate leakage current (1.55 × 10−5 A/mm), and a lower on-state resistance (21.65 Ω·mm); moreover, its dynamic RON value was reduced to 1.69 (from 2.26).
ISSN:1996-1944
1996-1944
DOI:10.3390/ma15103503