Atomic Structure Evaluation of Solution-Processed a -IZO Films and Electrical Behavior of a -IZO TFTs

Understanding the chemical reaction pathway of the metal-salt precursor is essential for modifying the properties of solution-processed metal-oxide thin films and further improving their electrical performance. In this study, we focused on the structural growth of solution-processed amorphous indium...

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Published in:Materials 2022-05, Vol.15 (10), p.3416
Main Authors: Kim, Dongwook, Lee, Hyeonju, Kim, Bokyung, Zhang, Xue, Bae, Jin-Hyuk, Choi, Jong-Sun, Baang, Sungkeun
Format: Article
Language:English
Subjects:
Aluminum
Atomic structure
Chemical reactions
Metal oxides
Nitrates
Precursors
Scanning electron microscopy
Semiconductor devices
Spectrum analysis
Thermal decomposition
Thin film transistors
Thin films
Zinc
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Summary:Understanding the chemical reaction pathway of the metal-salt precursor is essential for modifying the properties of solution-processed metal-oxide thin films and further improving their electrical performance. In this study, we focused on the structural growth of solution-processed amorphous indium-zinc-oxide ( -IZO) films and the electrical behavior of -IZO thin-film transistors (TFT). To this end, solution-processed -IZO films were prepared with respect to the Zn molar ratio, and their structural characteristics were analyzed. For the structural characteristic analysis of the -IZO film, the cross-section, morphology, crystallinity, and atomic composition characteristics were used as the measurement results. Furthermore, the chemical reaction pathway of the nitrate precursor-based IZO solution was evaluated for the growth process of the -IZO film structure. These interpretations of the growth process and chemical reaction pathway of the -IZO film were assumed to be due to the thermal decomposition of the IZO solution and the structural rearrangement after annealing. Finally, based on the structural/chemical results, the electrical performance of the fabricated -IZO TFT depending on the Zn concentration was evaluated, and the electrical behavior was discussed in relation to the structural characteristics.
ISSN:1996-1944
1996-1944
DOI:10.3390/ma15103416