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The Role of the Graphene Oxide (GO) and Reduced Graphene Oxide (RGO) Intermediate Layer in CZTSSe Thin-Film Solar Cells
Cu ZnSn(S,Se) (CZTSSe) solar cells with low cost and eco-friendly characteristics are attractive as future sources of electricity generation, but low conversion efficiency remains an issue. To improve conversion efficiency, a method of inserting intermediate layers between the CZTSSe absorber film a...
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Published in: | Materials 2022-05, Vol.15 (10), p.3419 |
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Main Authors: | , , , , |
Format: | Article |
Language: | English |
Subjects: | |
Citations: | Items that this one cites Items that cite this one |
Online Access: | Get full text |
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Summary: | Cu
ZnSn(S,Se)
(CZTSSe) solar cells with low cost and eco-friendly characteristics are attractive as future sources of electricity generation, but low conversion efficiency remains an issue. To improve conversion efficiency, a method of inserting intermediate layers between the CZTSSe absorber film and the Mo back contact is used to suppress the formation of MoSe
and decomposition of CZTSSe. Among the candidates for the intermediate layer, graphene oxide (GO) and reduced GO have excellent properties, including high-charge mobility and low processing cost. Depending on the type of GO, the solar cell parameters, such as fill factor (FF), were enhanced. Thus, the conversion efficiency of 6.3% was achieved using the chemically reduced GO intermediate layer with significantly improved FF. |
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ISSN: | 1996-1944 1996-1944 |
DOI: | 10.3390/ma15103419 |