Hot carrier dynamics of BiTeI with large Rashba spin splitting

We present a time-resolved ultrafast optical spectroscopy study on BiTeI, a noncentrosymmetric semiconductor with large spin-orbit splitting. By tuning the pump photon energy, hot carriers can be excited into different energy bands, and the hot carriers decay dynamics are measured. The hot carriers...

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Bibliographic Details
Published in:RSC advances 2022-06, Vol.12 (26), p.16479-16485
Main Authors: Deng, Hongze, Zhang, Chenhui, Liang, Weizheng, Zhang, Xi-Xiang, Luo, Sheng-Nian
Format: Article
Language:English
Subjects:
Chemistry
Decay
Energy bands
Photons
Reflectance
Spin dynamics
Splitting
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Summary:We present a time-resolved ultrafast optical spectroscopy study on BiTeI, a noncentrosymmetric semiconductor with large spin-orbit splitting. By tuning the pump photon energy, hot carriers can be excited into different energy bands, and the hot carriers decay dynamics are measured. The hot carriers excited by an 1.544 eV photon induce a positive differential reflectivity following a single exponential decay, while the hot carriers excited by an 1.651 eV photon show a negative reflectivity following two exponential decays, i.e. , the hot carriers excited by 1.544 eV and 1.651 eV photons show different decay dynamics. We also investigate hot carrier dynamics in each Rashba splitting band at the 1.544 eV and 1.651 eV photon pump, and there is no difference in hot carrier decay between the left and right Rashba splitting bands for both cases. We present a time-resolved ultrafast optical spectroscopy study on BiTeI, a noncentrosymmetric semiconductor with large spin-orbit splitting.
ISSN:2046-2069
2046-2069
DOI:10.1039/d2ra01978g