Crystalline Orientation-Dependent Ferromagnetism in N + -Implanted MgO Single Crystal

Samples of (110), (100), and (111) MgO single crystals were implanted with 70 keV N ions at room temperature. All as-implanted samples showed room temperature hysteresis in magnetization loops. The observed saturation magnetization (Ms) was 0.79 × 10−4 emu/g, 1.28 × 10−4 emu/g, and 1.5 × 10−4 emu/g...

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Bibliographic Details
Published in:Materials 2022-10, Vol.15 (20), p.7274
Main Authors: Wang, Xingyu, Ma, Chunlin, Zhou, Weiping, Tan, Weishi
Format: Article
Language:English
Subjects:
Crystal defects
Crystal structure
Crystallinity
Defects
Experiments
Ferromagnetism
Field-effect transistors
Interstitial defects
Ion implantation
Magnesium oxide
Magnetic fields
Magnetic saturation
Magnetism
Orientation
Photoelectrons
Photoluminescence
Radiation
Room temperature
Semiconductor industry
Semiconductors
Single crystals
Spectrum analysis
Substitutes
X ray photoelectron spectroscopy
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Summary:Samples of (110), (100), and (111) MgO single crystals were implanted with 70 keV N ions at room temperature. All as-implanted samples showed room temperature hysteresis in magnetization loops. The observed saturation magnetization (Ms) was 0.79 × 10−4 emu/g, 1.28 × 10−4 emu/g, and 1.5 × 10−4 emu/g for (110), (100) and (111) orientation implanted-MgO and follows the relation Ms(111) > Ms(100) > Ms(110), indicative of crystalline orientation-dependent ferromagnetism in N-implanted MgO. The samples were characterized by X-ray photoelectron spectroscopy (XPS), high resolution X-ray diffraction (HRXRD), reciprocal space mapping (RSM), and photoluminescence (PL). The results indicated that the amount of N-substitute-O and N-interstitial defects in these three N-implanted MgO samples showed the same changing tendency as compared with Ms data. Thus, we conclude that the N-substitute-O and N-interstitial defects may play a crucial role in controlling the N+-implanted-induced ferromagnetism.
ISSN:1996-1944
1996-1944
DOI:10.3390/ma15207274