Low-Frequency Noise Characteristics in HfO2-Based Metal-Ferroelectric-Metal Capacitors

The transport mechanism of HfO2-based metal-ferroelectric-metal (MFM) capacitors was investigated using low-frequency noise (LFN) measurements for the first time. The current–voltage measurement results revealed that the leakage behavior of the fabricated MFM capacitor was caused by the trap-related...

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Bibliographic Details
Published in:Materials 2022-10, Vol.15 (21), p.7475
Main Authors: Im, Ki-Sik, Shin, Seungheon, Jang, Chan-Hee, Cha, Ho-Young
Format: Article
Language:English
Subjects:
Capacitors
Conflicts of interest
Electric fields
Electrical measurement
Electrodes
Ferroelectric materials
Ferroelectricity
Ferroelectrics
Hafnium oxide
Investigations
LF noise
Transport properties
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Summary:The transport mechanism of HfO2-based metal-ferroelectric-metal (MFM) capacitors was investigated using low-frequency noise (LFN) measurements for the first time. The current–voltage measurement results revealed that the leakage behavior of the fabricated MFM capacitor was caused by the trap-related Poole–Frenkel transport mechanism, which was confirmed by the LFN measurements. The current noise power spectral densities (SI) obtained from the LFN measurements followed 1/f noise shapes and exhibited a constant electric field (E) × SI/I2 noise behavior. No polarization dependency was observed in the transport characteristics of the MFM capacitor owing to its structural symmetry.
ISSN:1996-1944
1996-1944
DOI:10.3390/ma15217475