Polarization Control in Integrated Graphene-Silicon Quantum Photonics Waveguides

We numerically investigated the use of graphene nanoribbons placed on top of silicon-on-insulator (SOI) strip waveguides for light polarization control in silicon photonic-integrated waveguides. We found that two factors mainly affected the polarization control: the graphene chemical potential and t...

Full description

Saved in:
Bibliographic Details
Published in:Materials 2022-12, Vol.15 (24), p.8739
Main Authors: Cammarata, Simone, Fontana, Andrea, Kaplan, Ali Emre, Cornia, Samuele, Dao, Thu Ha, Lacava, Cosimo, Demontis, Valeria, Iadanza, Simone, Vitali, Valerio, De Matteis, Fabio, Pedreschi, Elena, Magazzù, Guido, Toncelli, Alessandra, Spinella, Franco, Saponara, Sergio, Gunnella, Roberto, Rossella, Francesco, Salamon, Andrea, Bellani, Vittorio
Format: Article
Language:English
Subjects:
Chemical potential
Chemical vapor deposition
Electric fields
Graphene
Graphite
Insertion loss
Integrated circuits
Nanomaterials
Nanoribbons
Numerical analysis
Photonics
Polarization
Semiconductors
Silicon
Simulation
Tapering
Waveguides
Citations: Items that this one cites
Items that cite this one
Online Access:Get full text
Tags: Add Tag
No Tags, Be the first to tag this record!
Description
Summary:We numerically investigated the use of graphene nanoribbons placed on top of silicon-on-insulator (SOI) strip waveguides for light polarization control in silicon photonic-integrated waveguides. We found that two factors mainly affected the polarization control: the graphene chemical potential and the geometrical parameters of the waveguide, such as the waveguide and nanoribbon widths and distance. We show that the graphene chemical potential influences both TE and TM polarizations almost in the same way, while the waveguide width tapering enables both TE-pass and TM-pass polarizing functionalities. Overall, by increasing the oxide spacer thickness between the silicon waveguide and the top graphene layer, the device insertion losses can be reduced, while preserving a high polarization extinction ratio.
ISSN:1996-1944
1996-1944
DOI:10.3390/ma15248739