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Double Gate 6H-Silicon Carbide Schottky Barrier FET as Dielectrically Modulated Label Free Biosensor
This article presents a novel structure for efficient label free biosensing applications. The proposed device comprises of 6H-Silicon Carbide based double gate Schottky Barrier FET with two cavities to detect the biomolecules. Using Atlas TCAD simulations, it has been verified that the proposed devi...
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Published in: | SILICON 2023-06, Vol.15 (8), p.3387-3398 |
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Main Authors: | , , , |
Format: | Article |
Language: | English |
Subjects: | |
Citations: | Items that this one cites Items that cite this one |
Online Access: | Get full text |
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Summary: | This article presents a novel structure for efficient label free biosensing applications. The proposed device comprises of 6H-Silicon Carbide based double gate Schottky Barrier FET with two cavities to detect the biomolecules. Using Atlas TCAD simulations, it has been verified that the proposed device has the maximum ON current sensitivity of 1.02 × 10
5
, transconductance sensitivity of 7.741 × 10
4
, I
ON
/I
OFF
sensitivity of 31.4, sub-threshold swing sensitivity of 77.19 mV/decade and threshold voltage sensitivity of 34.54 mV for neutral biomolecule with K = 12. Similar simulations have also been performed for different charged biomolecules, varying from ± 5 × 10
10
C/cm
2
to ± 1 × 10
12
C/cm
2
. Besides, the proposed biosensor shows exceptional performance in terms of ON-current selectivity and sub-threshold swing selectivity. Finally, to check the device response for the changing input parameters, linearity of the biosensor has been analyzed. The achieved near-unity value of the Pearson’s fitness coefficient signifies the strong positive correlation between I
ON
/I
OFF
and dielectric property of the biomolecules. |
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ISSN: | 1876-990X 1876-9918 |
DOI: | 10.1007/s12633-022-02273-7 |