Electrical Properties of Bi-Doped PbTe Layers Grown byMolecular Beam Epitaxy on BaF2 Substrates

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Published in:Brazilian journal of physics 2004, Vol.34 (2)
Main Authors: A.M.P. dos Anjos, P.H.O. Rappl, E. Abramof, H. Closs, A.Y. Ueta
Format: Article
Language:Spanish
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Física
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container_title Brazilian journal of physics
container_volume 34
creator A.M.P. dos Anjos
P.H.O. Rappl
E. Abramof
H. Closs
A.Y. Ueta
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identifier ISSN: 0103-9733
ispartof Brazilian journal of physics, 2004, Vol.34 (2)
issn 0103-9733
1678-4448
language spa
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source SciELO; EZB Electronic Journals Library
subjects Física
title Electrical Properties of Bi-Doped PbTe Layers Grown byMolecular Beam Epitaxy on BaF2 Substrates
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