VisibleNIR photodetectors based on CdTe nanoribbonsElectronic supplementary information (ESI) available: Fig. S1S4. See DOI: 10.1039/c2nr30277b

Zinc blende-structured CdTe nanoribbons (NRs) were synthesized for the first time via a two-step process. The electronic, transport, and photoconductive properties of the CdTe NRs were studied systematically. It was revealed that the CdTe NRs showed p-type conductivity, and presented significant pho...

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Main Authors: Xie, Xing, Kwok, So-Ying, Lu, Zhenzhen, Liu, Yankuan, Cao, Yulin, Luo, Linbao, Zapien, J. A, Bello, Igor, Lee, Chun-Sing, Lee, Shuit-Tong, Zhang, Wenjun
Format: Article
Language:English
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Summary:Zinc blende-structured CdTe nanoribbons (NRs) were synthesized for the first time via a two-step process. The electronic, transport, and photoconductive properties of the CdTe NRs were studied systematically. It was revealed that the CdTe NRs showed p-type conductivity, and presented significant photoresponses to visibleNIR (400800 nm) irradiation with high responsivity and gain. The contribution of the factors such as surface states of NRs, channel length, light intensity, and working bias voltage to the photoresponse characteristics of CdTe NR photodetectors were discussed. Moreover, single CdTe NR-based visibleNIR photodetectors were also demonstrated to have high stability and reliability. CdTe nanoribbons synthesized by a two-step process show prominent photoconductive response to visibleNIR irradiation (400800 nm) with high responsivity.
ISSN:2040-3364
2040-3372
DOI:10.1039/c2nr30277b