Bandgap engineering of CdxZn1−xTe nanowiresElectronic supplementary information (ESI) available: Alloy nanowire growth and characterization. See DOI: 10.1039/c2nr33284a

Bandgap engineering of single-crystalline alloy Cd x Zn 1− x Te (0 ≤ x ≤ 1) nanowires is achieved successfully through control of growth temperature and a two zone source system in a vapor-liquid-solid process. Extensive characterization using electron microscopy, Raman spectroscopy and photolumines...

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Main Authors: Davami, Keivan, Pohl, Judith, Shaygan, Mehrdad, Kheirabi, Nazli, Faryabi, Hamid, Cuniberti, Gianaurelio, Lee, Jeong-Soo, Meyyappan, M
Format: Article
Language:English
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Summary:Bandgap engineering of single-crystalline alloy Cd x Zn 1− x Te (0 ≤ x ≤ 1) nanowires is achieved successfully through control of growth temperature and a two zone source system in a vapor-liquid-solid process. Extensive characterization using electron microscopy, Raman spectroscopy and photoluminescence shows highly crystalline alloy nanowires with precise tuning of the bandgap. It is well known that bulk Cd x Zn 1− x Te is popular for construction of radiation detectors and availability of a nanowire form of this material would help to improve detection sensitivity and miniaturization. This is a step forward towards the accomplishment of tunable and predetermined bandgap emissions for various applications. Bandgap engineering of single-crystalline alloy Cd x Zn 1− x Te (0 ≤ x ≤ 1) nanowires is achieved successfully through control of growth temperature.
ISSN:2040-3364
2040-3372
DOI:10.1039/c2nr33284a