Crystallization behaviors of ZnxSb100−x thin films for ultralong data retention phase change memory applications

Zn x Sb 100− x films with low Zn content are crystallized in a single-step process with Sb, while the film (Zn/Sb ratio is about 1 : 1) exhibits a two-step crystallization process with ZnSb metastable and stable phases. Importantly, ZnSb films have higher crystallization temperature (~257 °C), large...

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Main Authors: Chen, Yimin, Wang, Guoxiang, Shen, Xiang, Xu, Tiefeng, Wang, R. P, Wu, Liangcai, Lu, Yegang, Li, Junjian, Dai, Shixun, Nie, Qiuhua
Format: Article
Language:English
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Summary:Zn x Sb 100− x films with low Zn content are crystallized in a single-step process with Sb, while the film (Zn/Sb ratio is about 1 : 1) exhibits a two-step crystallization process with ZnSb metastable and stable phases. Importantly, ZnSb films have higher crystallization temperature (~257 °C), larger crystalline activation energy (~5.63 eV), better 10 year-data-retention (~201 °C) and lower melting temperature (~500 °C). ZnSb films have higher crystallization temperature (~257 °C), larger crystalline activation energy (~5.63 eV), better 10 year-data-retention (~201 °C) and lower melting temperature (~500 °C).
ISSN:1466-8033
DOI:10.1039/c3ce42024h