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Highly reliable switching via phase transition using hydrogen peroxide in homogeneous and multi-layered GaZnOx-based resistive random access memory devicesElectronic supplementary information (ESI) available. See DOI: 10.1039/c4cc10209f
Here, we propose an effective method for improving the resistive switching characteristics of solution-processed gallium-doped zinc oxide (GaZnO x ) resistive random access memory (RRAM) devices using hydrogen peroxide. Our results imply that solution processed GaZnO x RRAM devices could be one of t...
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Main Authors: | , , , , |
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Format: | Article |
Language: | English |
Online Access: | Get full text |
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Summary: | Here, we propose an effective method for improving the resistive switching characteristics of solution-processed gallium-doped zinc oxide (GaZnO
x
) resistive random access memory (RRAM) devices using hydrogen peroxide. Our results imply that solution processed GaZnO
x
RRAM devices could be one of the candidates for the development of low cost RRAM.
Here, we propose an effective method for improving the resistive switching characteristics of solution-processed gallium-doped zinc oxide (GaZnO
x
) resistive random access memory (RRAM) devices using hydrogen peroxide. |
---|---|
ISSN: | 1359-7345 1364-548X |
DOI: | 10.1039/c4cc10209f |