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Highly reliable switching via phase transition using hydrogen peroxide in homogeneous and multi-layered GaZnOx-based resistive random access memory devicesElectronic supplementary information (ESI) available. See DOI: 10.1039/c4cc10209f

Here, we propose an effective method for improving the resistive switching characteristics of solution-processed gallium-doped zinc oxide (GaZnO x ) resistive random access memory (RRAM) devices using hydrogen peroxide. Our results imply that solution processed GaZnO x RRAM devices could be one of t...

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Bibliographic Details
Main Authors: Park, Sung Pyo, Yoon, Doo Hyun, Tak, Young Jun, Lee, Heesoo, Kim, Hyun Jae
Format: Article
Language:English
Online Access:Get full text
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Summary:Here, we propose an effective method for improving the resistive switching characteristics of solution-processed gallium-doped zinc oxide (GaZnO x ) resistive random access memory (RRAM) devices using hydrogen peroxide. Our results imply that solution processed GaZnO x RRAM devices could be one of the candidates for the development of low cost RRAM. Here, we propose an effective method for improving the resistive switching characteristics of solution-processed gallium-doped zinc oxide (GaZnO x ) resistive random access memory (RRAM) devices using hydrogen peroxide.
ISSN:1359-7345
1364-548X
DOI:10.1039/c4cc10209f