Single-crystalline CdTe nanowire field effect transistors as nanowire-based photodetectorElectronic supplementary information (ESI) available: Experimental details and additional data. See DOI: 10.1039/c4cp03322a

The electronic and photoconductive characteristics of CdTe nanowire-based field effect transistors were studied systematically. The electrical characterization of a single CdTe nanowire FET verifies p -type behavior. The CdTe NW FETs respond to visible-near infrared (400-800 nm) incident light with...

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Main Authors: Shaygan, Mehrdad, Davami, Keivan, Kheirabi, Nazli, Baek, Changi Ki, Cuniberti, Gianaurelio, Meyyappan, M, Lee, Jeong-Soo
Format: Article
Language:English
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Summary:The electronic and photoconductive characteristics of CdTe nanowire-based field effect transistors were studied systematically. The electrical characterization of a single CdTe nanowire FET verifies p -type behavior. The CdTe NW FETs respond to visible-near infrared (400-800 nm) incident light with a fast, reversible and stable response characterized by a high responsivity (81 A W −1 ), photoconductive gain (∼2.5 × 10 4 %) and reasonable response and decay times (0.7 s and 1 s, respectively). These results substantiate the potential of CdTe nanowire-based photodetectors in optoelectronic applications. CdTe nanowire based field effect transistors respond to visible-NIR (400-800 nm) incident light with a fast, reversible and stable response exhibiting excellent potential for photodetectors.
ISSN:1463-9076
1463-9084
DOI:10.1039/c4cp03322a