Air-stable ambipolar field-effect transistor based on a solution-processed octanaphthoxy-substituted tris(phthalocyaninato) europium semiconductor with high and balanced carrier mobilitiesElectronic supplementary information (ESI) available: Details of the syntheses, film-preparation procedure, structural characterization data and additional physical characterization data. See DOI: 10.1039/c4sc03492a

Simple solvent vapor annealing over QLS film-based OFET devices fabricated from (Pc)Eu[Pc(ONh) 8 ]Eu[Pc(ONh) 8 ] led to a high and balanced ambipolar performance that has never been observed for small molecule single-component-based solution processed devices, with mobilities of 1.71 and 1.25 cm 2 V...

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Main Authors: Kong, Xia, Zhang, Xia, Gao, Dameng, Qi, Dongdong, Chen, Yanli, Jiang, Jianzhuang
Format: Article
Language:English
Online Access:Get full text
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Summary:Simple solvent vapor annealing over QLS film-based OFET devices fabricated from (Pc)Eu[Pc(ONh) 8 ]Eu[Pc(ONh) 8 ] led to a high and balanced ambipolar performance that has never been observed for small molecule single-component-based solution processed devices, with mobilities of 1.71 and 1.25 cm 2 V −1 s −1 for holes and electrons, respectively, under ambient conditions. Simple solvent vapor annealing over QLS film-based OFET devices fabricated from (Pc)Eu[Pc(ONh) 8 ]Eu[Pc(ONh) 8 ] led to a high and balanced ambipolar performance.
ISSN:2041-6520
2041-6539
DOI:10.1039/c4sc03492a