High speed, high temperature electrical characterization of phase change materials: metastable phases, crystallization dynamics, and resistance driftElectronic supplementary information (ESI) available. See DOI: 10.1039/c5nr05512a

During the fast switching in Ge 2 Sb 2 Te 5 phase change memory devices, both the amorphous and fcc crystalline phases remain metastable beyond the fcc and hexagonal transition temperatures respectively. In this work, the metastable electrical properties together with crystallization times and resis...

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Main Authors: Dirisaglik, Faruk, Bakan, Gokhan, Jurado, Zoila, Muneer, Sadid, Akbulut, Mustafa, Rarey, Jonathan, Sullivan, Lindsay, Wennberg, Maren, King, Adrienne, Zhang, Lingyi, Nowak, Rebecca, Lam, Chung, Silva, Helena, Gokirmak, Ali
Format: Article
Language:English
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Summary:During the fast switching in Ge 2 Sb 2 Te 5 phase change memory devices, both the amorphous and fcc crystalline phases remain metastable beyond the fcc and hexagonal transition temperatures respectively. In this work, the metastable electrical properties together with crystallization times and resistance drift behaviour of GST are studied using a high-speed, device-level characterization technique in the temperature range of 300 K to 675 K. A high-speed, device-level characterization technique is developed to capture metastable electrical properties, crystallization and resistance drift behaviour.
ISSN:2040-3364
2040-3372
DOI:10.1039/c5nr05512a