Influence of void-free perovskite capping layer on the charge recombination process in high performance CHNHPbI perovskite solar cells

• Published in: Nanoscale 2016-02, Vol.8 (7), p.4181-4193
• Main Authors: Fu, Kunwu, Nelson, Christopher T, Scott, Mary Cooper, Minor, Andrew, Mathews, Nripan, Wong, Lydia Helena
• Format: Article
• ISSN: 2040-3364; 2040-3372
• DOI: 10.1039/c5nr06362k

The stunning rise of methylammonium lead iodide perovskite material as a light harvesting material in recent years has drawn much attention in the photovoltaic community. Here, we investigated in detail the uniform and void-free perovskite capping layer in the mesoscopic perovskite devices and found it to play a critical role in determining device performance and charge recombination process. Compared to the rough surface with voids of the perovskite layer, surface of the perovskite capping layer obtained from sequential deposition process is much more uniform with less void formation and distribution within the TiO 2 mesoscopic scaffold is more homogeneous, leading to much improved photovoltaic parameters of the devices. The impact of void free perovskite capping layer surface on the charge recombination processes within the mesoscopic perovskite solar cells is further scrutinized via charge extraction measurement. Modulation of precursor solution concentrations in order to further improve the perovskite layer surface morphology leads to higher efficiency and lower charge recombination rates. Inhibited charge recombination in these solar cells also matches with the higher charge density and slower photovoltage decay profiles measured. Uniform surface coverage of perovskite capping layer formed with less void formation reduces charge recombination and enhances device performance.